A study of chemical products formed on sapphire (0001) during chemical-mechanical polishing

被引：71
作者：
Shi, Xiaolei
Pan, Guoshun [1 ]
Zhou, Yan
Xu, Li
Zou, Chunli
Gong, Hua
机构：
[1] Tsinghua Univ, Shenzhen Key Lab Micro Nano Mfg, Res Inst, Shenzhen 518057, Peoples R China
来源：
SURFACE & COATINGS TECHNOLOGY | 2015年 / 270卷
基金：
中国国家自然科学基金;
关键词：
Sapphire substrate; Chemical-mechanical polishing; Step-terrace structure; Chemical products; Material removal mechanism; SUBSTRATES SURFACE-TREATMENT; COLLOIDAL SILICA; CMP; WAFER; PLANARIZATION; CATALYST; REMOVAL; GAN;
D O I：
10.1016/j.surfcoat.2015.02.053
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A study of chemical products formed on sapphire (0001) during chemical mechanical polishing is presented. The results demonstrated that the formation and removal of chemical products both proceeded from the hexagonal close-packed sapphire Al-O layers described as atomic terraces, and the material removal rule of sapphire (0001) during chemical mechanical polishing is the regular removal of chemical products formed from the atomic terraces, which were successfully characterized by AFM with super-sharp scanning probes. Besides, we also found that the surface with screw dislocations could not be polished completely by CMP due to the crystal distortion energy, and a hard polishing pad could remove scratches more effectively than a soft one. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：206 / 220
页数：15
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