Photon-accelerated negative bias instability involving subgap states creation in amorphous In-Ga-Zn-O thin film transistor

被引：324

作者：

Oh, Himchan ^{[1
]}

Yoon, Sung-Min ^{[1
]}

Ryu, Min Ki ^{[1
]}

Hwang, Chi-Sun ^{[1
]}

Yang, Shinhyuk ^{[1
]}

Park, Sang-Hee Ko ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Oxide Elect Res Team, Taejon 305700, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 18期

关键词：

OXIDE SEMICONDUCTOR A-INGAZNO4-X; ELECTRONIC-STRUCTURE; TRANSPARENT;

D O I：

10.1063/1.3510471

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the visible photon accelerated negative bias instability (NBI) in amorphous In-Ga-Zn-O (a-IGZO) thin film transistor (TFT). As reported in previous works, the rigid shift in transfer curves with insignificant changes in field-effect mobility and subthreshold swing was observed. On the other hand, there is substantial change in capacitance-voltage characteristics caused by created subgap states. The suggested nature of created states is the ionized oxygen vacancy (V(O)(2+)) by the combination of visible light and negative bias. The generated V(O)(2)+ states enhance the NBI under illumination as increased deep hole trapping centers. Furthermore, the photoexcitation of V(O) to stable V(O)(2+) yields excess free carriers in conduction band. The increased carrier density also enhances the negative shift in turn-on voltage of a-IGZO TFT. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3510471]

引用

页数：3

共 18 条

[1] High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer [J].

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Jeong, J ;

Keszler, DA .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :013503-1

[2] Spectroscopic Investigation on the Origin of Photoinduced Carrier Generation in Semiconducting InGaO and InGaZnO Films [J].

Cho, Deok-Yong ;

Kim, Jeong Hwan ;

Kim, Un Ki ;

Chung, Yoon Jang ;

Song, Jaewon ;

Hwang, Cheol Seong ;

Lee, Jae-Min ;

Oh, Se-Jung .

JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 114 (27) :11962-11964

[3] Investigating the stability of zinc oxide thin film transistors [J].

Cross, R. B. M. ;

De Souza, M. M. .

APPLIED PHYSICS LETTERS, 2006, 89 (26)

[4] Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors [J].

Jeong, Jae Kyeong ;

Yang, Hui Won ;

Jeong, Jong Han ;

Mo, Yeon-Gon ;

Kim, Hye Dong .

APPLIED PHYSICS LETTERS, 2008, 93 (12)

[5] Electronic structure of oxygen deficient amorphous oxide semiconductor a-InGaZnO4-x:: Optical analyses and first-principle calculations [J].

Kamiya, Toshio ;

Nomura, Kenji ;

Hirano, Masahiro ;

Hosono, Hideo .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, 5 (09) :3098-+

[6] Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x: Tauc-Lorentz optical model and origins of subgap states [J].

Kamiya, Toshio ;

Nomura, Kenji ;

Hosono, Hideo .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (05) :860-867

[7]

LEE H, 2009, APPL PHYS LETT, V95, pNIL20

[8] Gate-bias stress in amorphous oxide semiconductors thin-film transistors [J].

Lopes, M. E. ;

Gomes, H. L. ;

Medeiros, M. C. R. ;

Barquinha, P. ;

Pereira, L. ;

Fortunato, E. ;

Martins, R. ;

Ferreira, I. .

APPLIED PHYSICS LETTERS, 2009, 95 (06)

[9] Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J].

Nomura, K ;

Ohta, H ;

Takagi, A ;

Kamiya, T ;

Hirano, M ;

Hosono, H .

NATURE, 2004, 432 (7016) :488-492

[10] Origins of threshold voltage shifts in room-temperature deposited and annealed a-In-Ga-Zn-O thin-film transistors [J].

Nomura, Kenji ;

Kamiya, Toshio ;

Hirano, Masahiro ;

Hosono, Hideo .

APPLIED PHYSICS LETTERS, 2009, 95 (01)

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