Shubnikov-de Haas and de Haas-van Alphen oscillations in Czochralski grown CoSi single crystal

Anisotropic transport, Shubnikov-de Haas (SdH), and de Haas-van Alphen (dHvA) quantum oscillations studies are reported on a high-quality CoSi single crystal grown by the Czochralski method. Temperature-dependent resistivities indicate the dominating electron-electron scattering. Magnetoresistance (MR) at 2 K reaches 610% for I parallel to [111] and B parallel to [01 (1) over bar] whereas it is 500% for I [01 (1) over bar] and B parallel to [111]. A negative slope in field-dependent Hall resistivity suggests electrons are the majority carriers. The carrier concentration extracted from Hall conductivity indicates no electron-hole compensation. In 3D CoSi, the electron transport lifetime is found to be approximately in the same order as the quantum lifetime, whereas in 2D electron gas the long-range scattering drives the transport life much larger than the quantum lifetime. From MR and Hall SdH oscillations, the effective masses and Dingle temperatures have been calculated. The dHvA oscillation reveals three frequencies at 18 T (gamma), 558 T (alpha) and 663 T (beta), whereas, SdH oscillation results in only two frequencies alpha and beta The gamma frequency observed in dHvA oscillation is a tiny hole pocket at the Gamma point.