Evidence for weak-antilocalization-weak-localization crossover and metal-insulator transition in CaCu3Ru4O12 thin films

被引：5

作者：

Jana, Subhadip ^{[1
,2
]}

Bhat, Shwetha G. ^{[3
]}

Behera, B. C. ^{[1
]}

Patra, L. ^{[4
]}

Kumar, P. S. Anil ^{[3
]}

Nanda, B. R. K. ^{[4
]}

Samal, D. ^{[1
,2
]}

机构：

[1] Inst Phys, Sachivalaya Marg, Bhubaneswar 751005, India

[2] Homi Bhabha Natl Inst, Mumbai 400085, Maharashtra, India

[3] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India

[4] Indian Inst Technol Madras, Dept Phys, Condensed Matter Theory & Computat Lab, Chennai, Tamil Nadu, India

来源：

EPL | 2021年 / 133卷 / 01期

关键词：

SPIN; CONDUCTIVITY; IMPURITY; PHASES;

D O I：

10.1209/0295-5075/133/17005

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Artificial confinement of electrons by tailoring the layer thickness has turned out to be a powerful tool to harness control over competing phases in nano-layers of complex oxides. We investigate the effect of dimensionality on transport properties of d-electron-based heavy-fermion metal CaCu3Ru4O12. Transport behavior evolves from metallic to localized regime upon reducing thickness and a metal-insulator transition is observed below 3 nm film thickness for which sheet resistance crosses h/e(2) similar to 25 k Omega, the quantum resistance in 2D. Magnetotransport study reveals a strong interplay between inelastic and spin-orbit scattering lengths upon reducing thickness, which results in weak-antilocalization (WAL) to weak-localization (WL) crossover in magnetoconductance. Copyright (C) 2021 EPLA

引用

页数：5

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