Photoluminescence close to V-shaped pits in the quantum wells and enhanced output power for InGaN light emitting diode

被引：13

作者：

Han, Dan ^{[1
,2
]}

Ma, Shufang ^{[3
]}

Jia, Zhigang ^{[1
,2
]}

Jia, Wei ^{[1
,2
]}

Liu, Peizhi ^{[1
,2
]}

Dong, Hailiang ^{[1
,2
]}

Shang, Lin ^{[3
]}

Zhang, Aiqin ^{[1
,2
]}

Zhai, Guangmei ^{[1
,2
]}

Li, Xuemin ^{[1
,2
]}

Liu, Xuguang ^{[1
,2
]}

Xu, Bingshe ^{[1
,2
,3
]}

机构：

[1] Taiyuan Univ Technol, Minist Educ, Key Lab Interface Sci & Engn Adv Mat, Taiyuan 030024, Shanxi, Peoples R China

[2] Taiyuan Univ Technol, Res Ctr Adv Mat Sci & Technol, Taiyuan 030024, Shanxi, Peoples R China

[3] Shaanxi Univ Sci & Technol, Inst Atom & Mol Sci, Xian 710021, Shaanxi, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2017年 / 50卷 / 47期

基金：

国家重点研发计划; 中国国家自然科学基金;

关键词：

semiconductor materials; light-emitting diodes; V-shaped pits; HOLE INJECTION; TEMPERATURE; DEPENDENCE; SAPPHIRE; EPITAXY; LAYER;

D O I：

10.1088/1361-6463/aa8ec8

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Unlike the typical 'S-shaped' temperature dependent behavior for InGaN/GaN light emitting diodes (LEDs), the emission of the c-plane MQWs (C-QWs) close to V-shaped pits (V-pits) broadens across the short-wavelength band and exhibits a blue-shift as temperature increases by temperature-dependent micro photoluminescence (mu-TDPL). The phenomenon can be mainly attributed to a higher proportion carriers generate high-energy radiative transition in C-QWs close to V-pits because of augmented carrier mobility, in which the mechanism of carriers absorbed in sidewall MQWs (S-QWs) move to the C-QWs close to V-pits acts as a significant process. The sizes of V-pits can be enlarged as increasing the thickness of low temperature GaN interlayer (LT-GaN interlayer), leading to improved output power for LEDs.

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页数：7

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