A W-band InAs/AlSb low-noise low-power amplifier

被引：46

作者：

Deal, WR ^{[1
]}

Tsai, R

Lange, MD

Boos, JB

Bennett, BR

Gutierrez, A

机构：

[1] Northrop Grumman Space Technol, Redondo Beach, CA 90278 USA

[2] USN, Res Lab, Washington, DC 20375 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2005年 / 15卷 / 04期

关键词：

antimonide-based compound semiconductor (ABCS); grounded coplanar waveguide (GCPW); low noise amplifier (LNA); millimeter-wave imaging;

D O I：

10.1109/LMWC.2005.845691

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first W-Band antimonide based compound semiconductor low-noise amplifier has been demonstrated. The compact 1.4-mm(2) three-stage co-planar waveguide amplifier with 0.1-mu m InAs/AlSb high electron mobility transistor devices is fabricated on a 100-mu m GaAs substrate. Minimum noise-figure of 5.4 dB with an associated gain of 11.1 dB is demonstrated at a total chip dissipation of 1.8 mW at 94 GHz. Biased for higher gain, 16 +/- 1 dB is measured over a 77-103 GHz frequency band.

引用

页码：208 / 210

页数：3

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