Barrier-height imaging of Cs-adsorbed Si(111)

被引：7

作者：

Yoshikawa, J ^{[1
]}

Kurokawa, S ^{[1
]}

Sakai, A ^{[1
]}

机构：

[1] Kyoto Univ, Mesoscop Mat Res Ctr, Sakyo Ku, Kyoto 6068501, Japan

来源：

APPLIED SURFACE SCIENCE | 2001年 / 169卷

关键词：

scanning tunneling microscopy; work function measurements; silicon; alkali metals;

D O I：

10.1016/S0169-4332(00)00651-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have carried out STM and height-barrier imaging on the Cs-absorbed Si(III) 7x7 surface. At small coverages, Cs atoms adsorbed on Si(III) at room temperature tend to form clusters, as previously observed by Hashizume et al. [J. Vac. Sci. Technol. B 9 (1991) 745]. Although they report empty-state images shouting anomalous contrast, no such images are observed in our experiment. The measured barrier height decreases locally above Ca sites and exhibits no long-range Variation around each adsorption site. The average reduction in the barrier height at Cs sites is found to be Delta phi = 0.87 eV. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：202 / 205

页数：4

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