INDUSTRIAL PVD METALLIZATION FOR HIGH EFFICIENCY CRYSTALLINE SILICON SOLAR CELLS

被引：0

作者：

Nekarda, Jan ^{[1
]}

Reinwand, Dirk ^{[1
]}

Grohe, Andreas ^{[1
]}

Hartmann, Philip ^{[1
]}

Preu, Ralf ^{[1
]}

Trassl, Roland ^{[2
]}

Wieder, Stephan ^{[2
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst ISE, Heidenhofstr 2, D-79110 Freiburg, Germany

[2] Appl Mat GmbH & Co KG, D-63755 Alzenau, Germany

来源：

2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3 | 2009年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper we present first results concerning different thermal evaporation processes for thin aluminum layers, which are carried out on a pilot system with a throughput of up to 540 wafers/h (156x156 mm(2)). To qualify the processes the deposited aluminum layers were evaluated with respect to homogeneity and conductivity. Additionally the effect of the different processes on the passivation quality of a thermally grown 100 nm thick SiO2 was analyzed by means of lifetime measurements, indicating a negligible effect of the conducted process variations on the passivation quality. Finally high-efficiency silicon solar cells were prepared to determine the overall potential and to compare it with an electron beam (e-gun) evaporation process, which is used as a standard process in our laboratory. An efficiency of up to 21% was achieved by the high deposition rate technique performing at least as well as our standard high efficiency process.

引用

页码：294 / +

页数：2