Planar Sub-Millimeter-Wave Array Antenna With Enhanced Gain and Reduced Sidelobes for 5G Broadcast Applications

被引:104
作者
Mao, Chun-Xu [1 ,2 ]
Khalily, Mohsen [1 ]
Xiao, Pei [1 ]
Brown, Tim W. C. [1 ]
Gao, Steven [3 ]
机构
[1] Univ Surrey, Inst Commun Syst, Innovat Ctr 5G, Guildford GU2 7XH, Surrey, England
[2] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA
[3] Univ Kent, Sch Engn & Digital Arts, Canterbury CT2 7NT, Kent, England
基金
欧盟地平线“2020”;
关键词
Antenna; array; broadband; broadcast; fifth generation (5G); millimeter-wave (mm-wave); omnidirectional; REFLECTARRAY ANTENNAS;
D O I
10.1109/TAP.2018.2874796
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a compact, broadband, planar array antenna with omnidirectional radiation in horizontal plane is proposed for the 26 GHz fifth-generation (5G) broadcast applications. The antenna element is composed of two dipoles and a substrate integrated cavity (SIC) as the power splitter. The two dipoles are placed side-by-side at both sides of the SIC, and they are compensated with each other to form an omnidirectional pattern in horizontal plane. By properly combing the resonant frequencies of the dipoles and the SIC, a wide impedance bandwidth from 24 to 29.5 GHz is achieved. To realize a large array while reducing the complexity, loss, and size of the feeding network, a novel dual-port structure combined with radiation and power splitting functions is proposed for the first time. The amplitude and phase on each element of the array can be tuned, and therefore, the grating lobes level can be significantly reduced. Based on the dual-port structure, an eight-element array with an enhanced gain of over 12 dBi is designed and prototyped. The proposed antenna also features low profile, low weight, and low cost, which is desirable for 5G commercial applications. Measured results agree well with the simulations, showing that the proposed high-gain array antenna has a broad bandwidth, omnidirectional pattern in horizontal plane, and low side-lobes.
引用
收藏
页码:160 / 168
页数:9
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