Interaction of SiC thermal oxidation by-products with SiO2

被引：18

作者：

Radtke, C. ^{[1
]}

Stedile, F. C. ^{[1
]}

Soares, G. V. ^{[2
]}

Krug, C. ^{[3
]}

da Rosa, E. B. O. ^{[3
]}

Driemeier, C. ^{[3
]}

Baumvol, I. J. R. ^{[2
,3
]}

Pezzi, R. P. ^{[4
]}

机构：

[1] Univ Fed Rio Grande do Sul, Inst Quim, BR-91509900 Porto Alegre, RS, Brazil

[2] Univ Caxias Do Sul, BR-95070560 Caxias Do Sul, Rio Grande Sul, Brazil

[3] Univ Fed Rio Grande do Sul, Inst Fis, BR-91509900 Porto Alegre, RS, Brazil

[4] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 25期

关键词：

D O I：

10.1063/1.2945643

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated oxygen incorporation and exchange during thermal growth of silicon oxide films on silicon carbide. This investigation was carried out in parallel with the thermal growth of silicon oxide films on silicon for comparison. We provide experimental evidence that oxidation by-products of silicon carbide out-diffuse and interact with the silicon oxide overlayer, incorporating C and O. This and other results are in sharp contrast to those obtained for silicon samples, constituting a key issue in the stability of any dielectric material used on silicon carbide. (c) 2008 American Institute of Physics.

引用

页数：3

共 17 条

[1] Time dependence of the oxygen exchange O2⇆SiO2 at the SiO2-Si interface during dry thermal oxidation of silicon [J].

Åkermark, T ;

Gosset, LG ;

Ganem, JJ ;

Trimaille, I ;

Vickridge, I ;

Rigo, S .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (02) :1153-1155

[2] Atomic transport during growth of ultrathin dielectrics on silicon [J].

Baumvol, IJR .

SURFACE SCIENCE REPORTS, 1999, 36 (1-8) :1-166

[3] High-carbon concentrations at the silicon dioxide-silicon carbide interface identified by electron energy loss spectroscopy [J].

Chang, KC ;

Nuhfer, NT ;

Porter, LM ;

Wahab, Q .

APPLIED PHYSICS LETTERS, 2000, 77 (14) :2186-2188

[4] The mechanism of defect creation and passivation at the SiC/SiO2 interface [J].

Deak, Peter ;

Knaup, Jan M. ;

Hornos, Tamas ;

Thill, Christoph ;

Gali, Adam ;

Frauenheim, Thomas .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (20) :6242-6253

[5] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[6] Atomic-scale mechanisms of oxygen precipitation and thin-film oxidation of SiC [J].

Di Ventra, M ;

Pantelides, ST .

PHYSICAL REVIEW LETTERS, 1999, 83 (08) :1624-1627

[7] Spectral analysis method for deriving RBS-like carbon spectra from the 12C(α, α)12C resonant reaction [J].

Driemeier, C. ;

Baumvol, I. J. R. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2008, 266 (09) :2041-2046

[8] The use of narrow nuclear resonances in the study of alternative metal-oxide-semiconductor structures [J].

Driemeier, C. ;

Miotti, L. ;

Pezzi, R. P. ;

Bastos, K. P. ;

Baumvol, I. J. R. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 249 :278-285

[9] Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics:: Understanding the processing, structure, and physical and electrical limits [J].

Green, ML ;

Gusev, EP ;

Degraeve, R ;

Garfunkel, EL .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) :2057-2121

[10] Theoretical study of the mechanism of dry oxidation of 4H-SiC -: art. no. 235321 [J].

Knaup, JM ;

Deák, P ;

Frauenheim, T ;

Gali, A ;

Hajnal, Z ;

Choyke, WJ .

PHYSICAL REVIEW B, 2005, 71 (23)

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