An Analytical Model for Double Surrounding Gate MOSFET

被引：0
|
作者：
Bairagya, Sourav [1 ]
Chakraborty, Abhishek [1 ]
机构：
[1] Kalyani Govt Engn Coll, Dept Elect & Commun Engn, Kalyani, W Bengal, India
来源：
PROCEEDINGS OF 2ND INTERNATIONAL CONFERENCE ON 2017 DEVICES FOR INTEGRATED CIRCUIT (DEVIC) | 2017年
关键词：
Double surrounding gate MOSFET; surafce potential; anlaytcal model; 1D Poisson's equation; short channel effects;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytical model for the electrical characteristics of Double Surrounding Gate MOSFET in strong inversion is presented in this paper. The analytical solution to the 1-D simplified Poisson's equation (Non-linear) in cylindrical coordinates with symmetric boundary conditions are examined. Closed form solution for body potential and the current has been developed. The concentration of the induced inversion charges by the same surface potential is found significantly higher in double surrounding gate MOSFET, which implies its better gate control and achievable higher current.
引用
收藏
页码：721 / 725
页数：5
相关论文
共 50 条
  • [21] Analytical Model and Performance Investigation of Electric Potential for Junctionless Cylindrical Surrounding Gate (JLCSG) MOSFET
    Abhinav
    Srivastava, Manish
    Kumar, Amrish
    Rai, Sanjeev
    2017 4TH INTERNATIONAL CONFERENCE ON SIGNAL PROCESSING AND INTEGRATED NETWORKS (SPIN), 2017, : 256 - 261
  • [22] Analytical Model of Double Gate MOSFET for High Sensitivity Low Power Photosensor
    Gautam, Rajni
    Saxena, Manoj
    Gupta, R. S.
    Gupta, Mridula
    JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2013, 13 (05) : 500 - 510
  • [23] Explicit analytical charge-based model of asymmetrical double gate MOSFET
    Reyboz, Marina
    Rozeau, Olivier
    Poiroux, Thierry
    Martin, Patrick
    Lecarval, Gilles
    Jomaah, Jalal
    2005 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, PROCEEDINGS, 2005, : 257 - 260
  • [24] A simple model for the nanoscale surrounding-gate MOSFET
    Jiménez, D
    Iñíguez, B
    Sáenz, JJ
    Suñé, J
    Marsal, LF
    Pallarès, J
    2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2, 2004, : 265 - 267
  • [25] Assessment of Quantum Scaling Length Model for Cylindrical Surrounding Double-Gate (CSDG) MOSFET
    Maduagwu U.A.
    Srivastava V.M.
    Micro and Nanosystems, 2021, 13 (04): : 467 - 472
  • [26] Drain Current and Noise Model of Cylindrical Surrounding Double-Gate MOSFET for RF Switch
    Srivastava, Viranjay M.
    Yadav, K. S.
    Singh, G.
    INTERNATIONAL CONFERENCE ON MODELLING OPTIMIZATION AND COMPUTING, 2012, 38 : 517 - 521
  • [27] Two-Dimensional Analytical Sub-Threshold Model of Double Gate Mosfet with Gate Stack
    Bansal, J.
    Sharma, N.
    Kumar, S. P.
    Chaujar, R.
    Gupta, M.
    Gupta, R. S.
    INTERNATIONAL CONFERENCE ON RECENT ADVANCES IN MICROWAVE THEORY AND APPLICATIONS, PROCEEDINGS, 2008, : 847 - 849
  • [28] Symmetric linearization method for double-gate and surrounding-gate MOSFET models
    Dessai, Gajanan
    Dey, Aritra
    Gildenblat, Gennady
    Smit, Geert D. J.
    SOLID-STATE ELECTRONICS, 2009, 53 (05) : 548 - 556
  • [29] An explicit analytical charge-based model of undoped independent double gate MOSFET
    Reyboz, Marina
    Rozeau, Olivier
    Poiroux, Thierry
    Martin, Patrick
    Jomaah, Jalal
    SOLID-STATE ELECTRONICS, 2006, 50 (7-8) : 1276 - 1282
  • [30] Physics-based model of the surrounding-gate MOSFET
    Jiménez, D
    Iñíguez, B
    Roig, J
    Suñe, J
    Marsal, LF
    Pallars, J
    Flores, D
    2005 SPANISH CONFERENCE ON ELECTRON DEVICES, PROCEEDINGS, 2005, : 393 - 396
12345