An Analytical Model for Double Surrounding Gate MOSFET

被引：0

作者：

Bairagya, Sourav ^{[1
]}

Chakraborty, Abhishek ^{[1
]}

机构：

[1] Kalyani Govt Engn Coll, Dept Elect & Commun Engn, Kalyani, W Bengal, India

来源：

PROCEEDINGS OF 2ND INTERNATIONAL CONFERENCE ON 2017 DEVICES FOR INTEGRATED CIRCUIT (DEVIC) | 2017年

关键词：

Double surrounding gate MOSFET; surafce potential; anlaytcal model; 1D Poisson's equation; short channel effects;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical model for the electrical characteristics of Double Surrounding Gate MOSFET in strong inversion is presented in this paper. The analytical solution to the 1-D simplified Poisson's equation (Non-linear) in cylindrical coordinates with symmetric boundary conditions are examined. Closed form solution for body potential and the current has been developed. The concentration of the induced inversion charges by the same surface potential is found significantly higher in double surrounding gate MOSFET, which implies its better gate control and achievable higher current.

引用

页码：721 / 725

页数：5

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