Ordering effects in InGaP/GaAs and InGaAsP/GaAs heterostructures grown by LP-MOVPE

被引：5

作者：

Francesio, L ^{[1
]}

Franzosi, P ^{[1
]}

Caldironi, M ^{[1
]}

Vitali, L ^{[1
]}

Dellagiovanna, M ^{[1
]}

DiPaola, A ^{[1
]}

Vidimari, F ^{[1
]}

Pellegrino, S ^{[1
]}

机构：

[1] TELETTRA SPA,ALCATEL,VIA TRENTO 30,I-20059 VIMERCATE,MI,ITALY

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS | 1996年 / 18卷 / 08期

关键词：

D O I：

10.1007/BF02459078

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The cationic ordering in InGaP epilayers grown by low-pressure vapour phase epitaxy on GaAs substrates has been investigated by X-Pay diffraction. The effects of both the substrate miscut and the doping with Si and Zn have been studied. It has been found that ordering effects occur inside relatively small domains on (1-11) and (-111) planes; however, by increasing the miscut angle the domains of the first kind tend to increase their dimensions, while the second ones tend to disappear. Moreover, doping with impurities substituting cations is seen to destroy the order. Photoluminescence anomalies have been revealed and correlated to the size and ordering degree of the ordered domain.

引用

页码：975 / 983

页数：9

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