The optical and electrical properties of Zn-doped CuAlO2 thin films deposited by RF magnetron sputtering

被引：17

作者：

Dong, Peiming ^{[1
]}

Zhang, Ming ^{[1
]}

Dong, Guobo ^{[1
]}

Zhao, Xueping ^{[1
]}

Yan, Hui ^{[1
]}

机构：

[1] Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100022, Peoples R China

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2008年 / 155卷 / 05期

关键词：

D O I：

10.1149/1.2884858

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Transparent conducting CuAl1-xZnxO2 (0 <= x <= 0.02) thin films were deposited on quartz substrates using radio frequency (rf) magnetron sputtering at 20% oxygen partial pressure. In the visible region, the transmittance of Zn-doped thin films is relatively low, whereas the CuAl0.98Zn0.02O2 thin film has a high transmittance of about 80%. The electrical conductivity increases rapidly with the increase in doping concentration. At room temperature, the electrical conductivity for the doped sample with x=0.5% is 0.124 S cm(-1), which is about 2 orders of magnitude higher than that of the undoped sample (0.69x10(-2) S cm(-1)). In the temperature range of 200-300 K, the temperature dependence of the conductivity for CuAl1-xZnxO2 (0 <= x <= 0.02) thin films is of semiconducting thermal-activation type. These results indicate that it is possible to improve the conductivity of CuAlO2 thin film by Zn doping with the help of controlling the oxygen deficiency. (C) 2008 The Electrochemical Society.

引用

页码：H319 / H322

页数：4

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