Improved light extraction efficiency of InGaN/GaN blue LED by patterning free surfaces

被引:0
作者
Robidas, Dipika [1 ]
Singh, Sumitra [1 ]
Rohila, Navin [1 ]
Pal, Suchandan [1 ]
Dhanavantri, Chenna [1 ]
机构
[1] Cent Elect Engn Res Inst, Council Sci & Ind Res, Pilani 333031, Rajasthan, India
来源
PHOTONICS 2010: TENTH INTERNATIONAL CONFERENCE ON FIBER OPTICS AND PHOTONICS | 2011年 / 8173卷
关键词
light-emitting diode (LED); Light Extraction efficiency; InGaN/GaN; Patterned surface; Hexagonal facets; Die structure; Light interaction; Radiation pattern; Radiant intensity; EMITTING-DIODES;
D O I
10.1117/12.899875
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The light extraction efficiency of GaN/InGaN based blue LED is improved by using hexagonal facets on n- and p-free surfaces and on substrate interfaces. Light interaction with patterned surfaces having hexagonal facets significantly improved the light extraction efficiency. The simulated results show that the light extraction efficiency is drastically improved from 18.08% to 89.27% by patterning the free surfaces.
引用
收藏
页数:7
相关论文
共 50 条
  • [31] Simulation for light power distribution of 3D InGaN/GaN MQW LED with textured surface
    Cheng, Li-Wen
    Sheng, Yang
    Xia, Chang-Sheng
    Lu, Wei
    Lestrade, Michel
    Li, Zhan-Ming
    OPTICAL AND QUANTUM ELECTRONICS, 2011, 42 (11-13) : 739 - 745
  • [32] Various nanopillars on GaN-based LED to enhance light-extraction efficiency by SILAR method
    Shei, Shih-Chang
    INNOVATION, COMMUNICATION AND ENGINEERING, 2014, : 257 - 260
  • [33] Enhanced light extraction efficiency of GaN-based LED fabricated by multi-chip array
    Yoo, Hodol
    Ha, Kab
    Baek, Ji-Young
    Jung, Mee-Suk
    Su, Pei-Chen
    Kim, Yoonsu
    Cheon, Suyoung
    Cho, Soohaeng
    Kim, Kyoung-Kook
    OPTICAL MATERIALS EXPRESS, 2015, 5 (05): : 1098 - 1108
  • [34] Effect of structure of nano-hemisphere microlens array on light extraction efficiency of GaN-LED
    Wang, Xiaomin
    Li, Kang
    Kong, Fanmin
    Zhang, Zhenming
    Gao, Hui
    Guangxue Xuebao/Acta Optica Sinica, 2012, 32 (12):
  • [35] Light extraction efficiency of GaN-based LED with pyramid texture by using ray path analysis
    Pan, Jui-Wen
    Wang, Chia-Shen
    OPTICS EXPRESS, 2012, 20 (19): : A630 - A640
  • [36] THE INFLUENCE OF SUPERLATTICE ON THE INTERNAL QUANTUM EFFICIENCY OF LED STRUCTURES WITH InGaN/GaN QUANTUM WELLS
    Romanov, I. S.
    Prudaev, I. A.
    Marmalyuk, A. A.
    Kureshov, V. A.
    Sabitov, D. R.
    Mazalov, A. V.
    RUSSIAN PHYSICS JOURNAL, 2013, 56 (07) : 760 - 762
  • [37] The Influence of Superlattice on the Internal Quantum Efficiency of LED Structures with InGaN / GaN Quantum Wells
    I. S. Romanov
    I. A. Prudaev
    A. A. Marmalyuk
    V. A. Kureshov
    D. R. Sabitov
    A. V. Mazalov
    Russian Physics Journal, 2013, 56 : 760 - 762
  • [38] Pattern-Coverage Effect on Light Extraction Efficiency of GaN LED on Patterned-Sapphire Substrate
    Lin, H. Y.
    Chen, Y. J.
    Chang, C. C.
    Li, X. F.
    Hsu, S. C.
    Liu, C. Y.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2012, 15 (03) : H72 - H74
  • [39] Highly efficient InGaN/GaN blue LED on 8-inch Si (111) substrate
    Kim, Jun-Youn
    Tak, Youngjo
    Kim, Jaekyun
    Hong, Hyun-Gi
    Chae, Suhee
    Lee, Jae Won
    Choi, Hyoji
    Park, Youngsoo
    Chung, U-In
    Kim, Jong-Ryeol
    Shim, Jong-In
    GALLIUM NITRIDE MATERIALS AND DEVICES VII, 2012, 8262
  • [40] Electrical characterization and thermal admittance spectroscopy analysis of InGaN/GaN MQW blue LED structure
    El-Mostafa Bourim
    Jeong In Han
    Electronic Materials Letters, 2015, 11 : 982 - 992