High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes

被引：62

作者：

Martinez, Nicholas J. D. ^{[1
]}

Derose, Christopher T. ^{[1
]}

Brock, Reinhard W. ^{[1
]}

Starbuck, Andrew L. ^{[1
]}

Pomerene, Andrew T. ^{[1
]}

Lentine, Anthony L. ^{[1
]}

Trotter, Douglas C. ^{[1
]}

Davids, Paul S. ^{[1
]}

机构：

[1] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA

来源：

OPTICS EXPRESS | 2016年 / 24卷 / 17期

基金：

美国能源部;

关键词：

LOW-VOLTAGE; PHOTODETECTOR; HYDROGEN; GROWTH;

D O I：

10.1364/OE.24.019072

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER < 10(-12), in the range from -18.3 dBm to -12 dBm received optical power into a 50 Omega load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm. (C) 2016 Optical Society of America

引用

页码：19072 / 19081

页数：10

共 35 条

[1]

Ang K.-W., 2010, OPTICAL FIBER COMMUN, pJWA36

[2] Low-voltage and high-responsivity germanium bipolar phototransistor for optical detections in the near-infrared regime [J].

Ang, Kah-Wee ;

Yu, Ming-Bin ;

Lo, Guo-Qiang ;

Kwong, Dim-Lee .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (10) :1124-1127

[3] Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects [J].

Assefa, Solomon ;

Xia, Fengnian ;

Vlasov, Yurii A. .

NATURE, 2010, 464 (7285) :80-U91

[4] Resonant Si/Ge avalanche photodiode with an ultrahigh gain bandwidth product [J].

Bowers, John E. ;

Dai, Daoxin ;

Zaoui, W. S. ;

Kang, Yimin ;

Morse, Mike .

2010 IEEE PHOTONICS SOCIETY WINTER TOPICALS MEETING SERIES, 2010, :111-+

[5] High sensitivity 10Gb/s Si photonic receiver based on a low-voltage waveguide-coupled Ge avalanche photodetector [J].

Chen, H. T. ;

Verbist, J. ;

Verheyen, P. ;

De Heyn, P. ;

Lepage, G. ;

De Coster, J. ;

Absil, P. ;

Yin, X. ;

Bauwelinck, J. ;

Van Campenhout, J. ;

Roelkens, G. .

OPTICS EXPRESS, 2015, 23 (02) :815-822

[6]

Chen H T., 2015, Optical Communication (ECOC), 2015 European Conference on, P1, DOI 10.23919/OCEANS.2015.7401829I

[7] Ge-on-Si approaches to the detection of near-infrared light [J].

Colace, L ;

Masini, G ;

Assanto, G .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (12) :1843-1852

[8] Ge/Si (001) photodetector for near infrared light [J].

Colace, L ;

Masini, G ;

Galluzzi, F ;

Assanto, G ;

Capellini, G ;

Di Gaspare, L ;

Evangelisti, F .

SOLID STATE PHENOMENA, 1997, 54 :55-58

[9] Low dark-current germanium-on-silicon near-infrared detectors [J].

Colace, Lorenzo ;

Ferrara, Pasquale ;

Assanto, Gaetano ;

Fulgoni, Dom ;

Nash, Lee .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (21-24) :1813-1815

[10]

Cox J. A., 2014, INTEGRATED PHOTONICS

← 1 2 3 4 →