Spectroscopic ellipsometry study of buried graphitized layers in the ion-implanted diamond

被引：19
作者：
Khomich, AV
Kovalev, VI
Zavedeev, EV
Khmelnitskiy, RA
Gippius, AA
机构：
[1] Inst Radio Engn & Elect, Fryazino 141190, Russia
[2] Inst Gen Phys, Ctr Nat Sci, Moscow 119991, Russia
[3] PN Lebedev Phys Inst, Moscow 117924, Russia
来源：
VACUUM | 2005年 / 78卷 / 2-4期
关键词：
diamond; ion implantation; optical properties; spectroscopic ellipsometry; annealing; graphitization;
D O I：
10.1016/j.vacuum.2005.01.090
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ellipsometric analysis of the buried graphitized layer formed in the He+-implanted and annealed diamond has been made. Spectroscopic ellipsometry data in the 360-1050 nm range at the incident angles between 65 degrees and 75 degrees were fitted based on a three-layer structure model. Using optical spectroscopy, atomic force and white-light interferometry microscopy data the n and k spectra of graphitized layer, its thickness and roughness were determined with high accuracy. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：583 / 587
页数：5
相关论文
共 10 条
[1]   Diamond-graphite transformation induced by light ions implantation [J].
Gippius, AA ;
Khmelnitsky, RA ;
Dravin, VA ;
Khomich, AV .
DIAMOND AND RELATED MATERIALS, 2003, 12 (3-7) :538-541
[2]   The nature of damage in ion-implanted and annealed diamond [J].
Kalish, R ;
Reznik, A ;
Nugent, KW ;
Prawer, S .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 148 (1-4) :626-633
[3]  
Khmelnitskiy R. A., 1996, Journal of Chemical Vapor Deposition, V5, P121
[4]  
KOVALEV VI, 2002, APPL SPECTROSC, V69, P258
[5]   Recovery of diamond after irradiation at high energy and annealing [J].
Lai, PF ;
Prawer, S ;
Bursill, LA .
DIAMOND AND RELATED MATERIALS, 2001, 10 (01) :82-86
[6]   Analysis of the ellipsometric spectra of amorphous carbon thin films for evaluation of the sp3-bonded carbon content [J].
Lee, J ;
Collins, RW ;
Veerasamy, VS ;
Robertson, J .
DIAMOND AND RELATED MATERIALS, 1998, 7 (07) :999-1009
[7]  
PALIK E, 1991, HDB OPTICAL CONSTANT, P171
[8]   HYDROGEN-SENSITIVE PALLADIUM FILM STUDY WITH PRECISE AND FAST ELLIPSOMETERS [J].
PEROV, PI ;
KOVALEV, VI ;
RUKOVISHNIKOV, AI ;
ROSSUKANYI, NM ;
JOHNSON, WH .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1994, 76 (05) :797-803
[9]   Comparative study of polysilicon-on-oxide using spectroscopic ellipsometry, atomic force microscopy, and transmission electron microscopy [J].
Petrik, P ;
Fried, M ;
Lohner, T ;
Berger, R ;
Biro, LP ;
Schneider, C ;
Gyulai, J ;
Ryssel, H .
THIN SOLID FILMS, 1998, 313 :259-263
[10]  
Vavilov V. S., 1994, Physics-Uspekhi, V37, P407, DOI 10.1070/PU1994v037n04ABEH000023
1