Design and realisation of waveguide integrated AlInAs/GaInAs HEMTs regrown by MBE for high bit rate optoelectronic receivers on InP

被引：3

作者：

Schramm, C

Schlaak, W

Mekonnen, GG

Passenberg, W

Umbach, A

Seeger, A

Wolfram, P

Bach, HG

机构：

[1] Heinrich-Hertz-Inst. F. N., D-10587 Berlin

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 12期

关键词：

high electron mobility transistors; optoelectronic devices; optical receivers; integrated optoelectronics;

D O I：

10.1049/el:19960730

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The successful fabrication of AlInAs/GaInAs HEMTs, regrown by MBE on patterned optical waveguide surfaces after the local removal of a previously grown photodiode layer stack, is reported. The devices are part of a distributed amplifier within an integrated optoelectronic receiver intended to operate at a 1.55 mu m wavelength and at bit rates of 20 and/or 40Gbit/s. The performance of the HEMTs is highly comparable to reference devices grown on planar surfaces.

引用

页码：1139 / 1141

页数：3