Comparison of Ni-metal induced lateral crystallization thin-film transistors fabricated by rapid thermal annealing and conventional furnace annealing at 565°C

被引：1

作者：

Hu, Chen-Ming ^{[1
]}

Wu, Yew Chung Sermon ^{[1
]}

Gong, Jun-Wei ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 11期

关键词：

RTA; CFA; NILC; polycrystalline silicon; thin-film transistor;

D O I：

10.1143/JJAP.46.7204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two annealing methods, pulse rapid thermal annealing (RTA) and conventional furnace annealing (CFA), were used to fabricate nickel-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) at 565 degrees C. It was found that the growth rate of RTA-POLY was 5 times higher than that of CFA-POLY. The performance of RTA-thin-film transistors (TFTs) was not as good as that of CFA-TFT. RTA-TFT showed lower drain current, higher threshold voltage, larger subthreshold swing, lower electron mobility, and lower leakage current than CFA-TFT.

引用

页码：7204 / 7207

页数：4

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