Mapping of ion-implanted n-SiC schottky contacts using scanning internal photoemission microscopy

被引：12

作者：

Murase, Shingo ^{[1
]}

Mishima, Tomoyoshi ^{[2
]}

Nakamura, Tohru ^{[2
]}

Shiojima, Kenji ^{[1
]}

机构：

[1] Univ Fukui, Grad Sch Elect & Elect Engn, 3-9-1 Bunkyo, Fukui 9108507, Japan

[2] Hosei Univ, Res Ctr Micronano Technol, 3-11-15 Midori Cho, Koganei, Tokyo 1840003, Japan

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2017年 / 70卷

关键词：

SiC; Schottky contact; Ion implantation; Scanning internal photoemission microscopy; Damage characterization; ELECTRICAL-PROPERTIES; PHOSPHORUS; AL;

D O I：

10.1016/j.mssp.2016.10.055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nitrogen-ion-implantation damage on SiC has been clearly imaged using scanning internal photoemission microscopy (SIPM). Ni Schottky contacts were formed on selectively N-ion-implanted n-SiC surfaces at 80 keV with an ion dose of 1x10(15) cm(-2). A photocurrent, Y (photoyield; defined as photocurrent per incident photon), was detected by focusing and scanning a laser beam over the contacts. The N-ion-implanted regions were clearly imaged with Y measurements. Y was detected even where the implanted region is protruding out of the electrode in the unannealed sample. We also found significant increase of Y in the periphery of the ion implanted region. We confirmed that SIPM is a powerful tool for mapping damages due to ion implantation.

引用

页码：86 / 91

页数：6

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