Poly-Si Thin-Film Transistors on Polyimide Substrate for 1 mm Diameter Rollable Active-Matrix Organic Light-Emitting Diode Display

被引:12
作者
Lee, Suhui [1 ]
Cho, Young Joo [1 ]
Han, Byungju [1 ]
Lee, Jaeseob [2 ]
Choi, Sanggun [2 ]
Kang, Taewook [2 ]
Chu, Hye Yong [2 ]
Kwag, Jinoh [2 ]
Kim, Sung Chul [3 ]
Jang, Jin [1 ]
机构
[1] Kyung Hee Univ, Dept Informat Display, Adv Display Res Ctr ADRC, 26 Kyungheedae Ro, Seoul 02447, South Korea
[2] Samsung Display Co, Display Res Ctr, Yongin 17113, Gyeonggi Do, South Korea
[3] Samsung Display Co Ltd, Yongin 17113, Gyeonggi Do, South Korea
关键词
bending stress; flexible displays; low-temperature poly-Si; polyimide substrate; rolling stress; thin-film transistors; POLYCRYSTALLINE SILICON; PLASMA HYDROGENATION; TRENCH STRUCTURE; ENHANCEMENT; PERFORMANCE; ENDURANCE; DIELECTRICS; CIRCUITS;
D O I
10.1002/adem.202100910
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin-film transistor (TFT) backplanes on polyimide (PI) substrate are widely used for foldable active-matrix organic light-emitting diode (AMOLED) display. The low-temperature poly-Si (LTPS) TFTs on PI substrate for AMOLED displays use the inorganic interlayer (ITL) of SiO2/SiNx deposited on the poly-Si. Herein, a flexible ITL, very thin SiNx/organic PI layer stack, is introduced to improve both mechanical flexibility and environmental stability of LTPS TFT backplane on PI substrate. The electrical stabilities of LTPS TFT with various ITLs are studied such as positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS). It is found that the LTPS TFTs are stable under PBTS and/or NBTS. However, the results on mechanical stability depend on the ITL used. The LTPS TFTs with hybrid ITL (SiNx/organic PI) and organic ITL(PI) are stable under mechanical stress because these TFTs have much less strain under mechanical bending because of the low Young's modulus of PI material. In addition, environmental stabilities of the LTPS TFTs with hybrid ITL is stable at 85 degrees C and 85% humidity in dark. Therefore, the LTPS TFTs with hybrid ITL are very suitable for rollable active matrix displays.
引用
收藏
页数:8
相关论文
共 38 条
  • [1] Effects of mechanical stresses on the reliability of low-temperature polycrystalline silicon thin film transistors for foldable displays
    Bae, Min Soo
    Park, Chuntaek
    Shin, Dongseok
    Lee, Sang Myung
    Yun, Ilgu
    [J]. SOLID-STATE ELECTRONICS, 2017, 133 : 1 - 5
  • [2] Plasma hydrogenation of metal-induced laterally crystallized thin film transistors
    Bhat, G
    Kwok, H
    Wong, M
    [J]. IEEE ELECTRON DEVICE LETTERS, 2000, 21 (02) : 73 - 75
  • [3] Effect of Grain Boundary Protrusion on Electrical Performance of Low Temperature Polycrystalline Silicon Thin Film Transistors
    Billah, Mohammad Masum
    Siddik, Abu Bakar
    Kim, Jung Bae
    Zhao, Lai
    Choi, Soo Young
    Yim, Dong Kil
    Jang, Jin
    [J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2019, 7 (01) : 503 - 511
  • [4] Flexible low-temperature polycrystalline silicon thin-film transistors
    Chang, T-C
    Tsao, Y-C
    Chen, P-H
    Tai, M-C
    Huang, S-P
    Su, W-C
    Chen, G-F
    [J]. MATERIALS TODAY ADVANCES, 2020, 5
  • [5] Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low Temperature Poly-Si Thin-Film Transistors
    Chen, Bo-Wei
    Chang, Ting-Chang
    Chang, Kuan-Chang
    Hung, Yu-Ju
    Huang, Shin-Pin
    Chen, Hua-Mao
    Liao, Po-Yung
    Lin, Yu-Ho
    Huang, Hui-Chun
    Chiang, Hsiao-Cheng
    Yang, Chung-I
    Zheng, Yu-Zhe
    Chu, Ann-Kuo
    Li, Hung-Wei
    Tsai, Chih-Hung
    Lu, Hsueh-Hsing
    Wang, Terry Tai-Jui
    Chang, Tsu-Chiang
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (13) : 11942 - 11949
  • [6] Effects of Repetitive Mechanical Bending Strain on Various Dimensions of Foldable Low Temperature Polysilicon TFTs Fabricated on Polyimide
    Chen, Bo-Wei
    Chang, Ting-Chang
    Hung, Yu-Ju
    Huang, Shin-Ping
    Liao, Po-Yung
    Yang, Chung-Yi
    Chu, Ann-Kuo
    Wang, Terry Tai-Jui
    Chang, Tsu-Chiang
    Su, Bo-Yuan
    Kuo, Su-Chun
    Huang, I-Yu
    [J]. IEEE ELECTRON DEVICE LETTERS, 2016, 37 (08) : 1010 - 1013
  • [7] Impact of repeated uniaxial mechanical strain on p-type flexible polycrystalline thin film transistors
    Chen, Bo-Wei
    Chang, Ting-Chang
    Hung, Yu-Ju
    Hsieh, Tien-Yu
    Tsai, Ming-Yen
    Liao, Po-Yung
    Chen, Bo-Yao
    Tu, Yi-Hsien
    Lin, Yuan-Yao
    Tsai, Wu-Wei
    Yan, Jing-Yi
    [J]. APPLIED PHYSICS LETTERS, 2015, 106 (18)
  • [8] Integrating Poly-Silicon and InGaZnO Thin-Film Transistors for CMOS Inverters
    Chen, ChangDong
    Yang, Bo-Ru
    Liu, Chuan
    Zhou, Xing-Yu
    Hsu, Yuan-Jun
    Wu, Yuan-Chun
    lm, Jang-Soon
    Lu, Po-Yen
    Wong, Man
    Kwok, Hoi-Sing
    Shieh, Han-Ping D.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (09) : 3668 - 3671
  • [9] High-Performance Flexible TFT Circuits Using TIPS Pentacene and Polymer Blend on Plastic
    Choi, Min Hee
    Kim, Byung Soon
    Jang, Jin
    [J]. IEEE ELECTRON DEVICE LETTERS, 2012, 33 (11) : 1571 - 1573
  • [10] Remarkable Improvement in Foldability of Poly-Si Thin-Film Transistor on Polyimide Substrate Using Blue Laser Crystallization of Amorphous Si and Comparison with Conventional Poly-Si Thin-Film Transistor Used for Foldable Displays
    Do, Youngbin
    Jeong, Duk Young
    Lee, Suhui
    Kang, Seongbok
    Jang, Seonhyang
    Jang, Jin
    [J]. ADVANCED ENGINEERING MATERIALS, 2020, 22 (05)