Thermopower investigation of n- and p-type GaN

被引:48
作者
Brandt, MS [1 ]
Herbst, P [1 ]
Angerer, H [1 ]
Ambacher, O [1 ]
Stutzmann, M [1 ]
机构
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
来源
PHYSICAL REVIEW B | 1998年 / 58卷 / 12期
关键词
D O I
10.1103/PhysRevB.58.7786
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A comparative investigation of the Hall effect, conductivity, and thermopower properties of molecular-beam-epitaxy-grown GaN is presented. In unintentionally doped n-rype GaN, a negligible thermal activation of the thermopower is observed above 300 K. In as-grown GaN:Mg, a thermopower activation energy of 280 meV is observed at high temperatures, as well as a scattering factor A = 3. At temperatures below 120 K, the Seebeck coefficient of p-type GaN changes sign and indicates n-type conductivity. These results show that hopping in the acceptor band contributes significantly to the electronic transport properties. After hydrogenation of GaN:Mg, both conductivity and thermopower have an activation energy of 520 meV, which is at variance with the presence of potential fluctuations in the material. This demonstrates hat hydrogen passivates Mg-doped GaN by the formation of electrically inactive Mg-H complexes, in contrast to the formation of compensating H-related donors, which should lead to noticeable potential fluctuations. [S0163-1829(98)00335-X].
引用
收藏
页码:7786 / 7791
页数:6
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