In-Volume Laser Direct Writing of Silicon-Challenges and Opportunities

被引：65

作者：

Chambonneau, Maxime ^{[1
]}

Grojo, David ^{[2
]}

Tokel, Onur ^{[3
,4
,5
]}

Ilday, Fatih Omer ^{[3
,4
,5
,6
]}

Tzortzakis, Stelios ^{[7
,8
,9
]}

Nolte, Stefan ^{[1
,10
]}

机构：

[1] Friedrich Schiller Univ Jena, Inst Appl Phys, Abbe Ctr Photon, Albert Einstein Str 15, D-07745 Jena, Germany

[2] Aix Marseille Univ, CNRS, LP3, F-13288 Marseille, France

[3] Bilkent Univ, UNAM Natl Nanotechnol Res Ctr, TR-06800 Ankara, Turkey

[4] Bilkent Univ, Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey

[5] Bilkent Univ, Dept Phys, TR-06800 Ankara, Turkey

[6] Bilkent Univ, Dept Elect & Elect Engn, TR-06800 Ankara, Turkey

[7] Texas A&M Univ Qatar, Sci Program, Doha 23874, Qatar

[8] Fdn Res & Technol Hellas FORTH, Inst Elect Struct & Laser IESL, Heraklion 1527, GR-71110 Iraklion, Greece

[9] Univ Crete, Mat Sci & Technol Dept, Iraklion 71003, Greece

[10] Ctr Excellence Photon, Fraunhofer Inst Appl Opt & Precis Engn IOF, Albert Einstein Str 7, D-07745 Jena, Germany

来源：

LASER & PHOTONICS REVIEWS | 2021年 / 15卷 / 11期

基金：

欧洲研究理事会;

关键词：

infrared; processing; nonlinear propagation; silicon; laser-matter interaction; laser direct writing; OPTICAL WAVE-GUIDES; INDUCED SUBSURFACE MODIFICATIONS; FEMTOSECOND LASER; PULSED-LASER; CRYSTALLINE SILICON; 2-PHOTON ABSORPTION; FUSED-SILICA; TEMPERATURE-DEPENDENCE; SURFACE DAMAGE; HEAVY-ION;

D O I：

10.1002/lpor.202100140

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Laser direct writing is a widely employed technique for 3D, contactless, and fast functionalization of dielectrics. Its success mainly originates from the utilization of ultrashort laser pulses, offering an incomparable degree of control on the produced material modifications. However, challenges remain for devising an equivalent technique in crystalline silicon which is the backbone material of the semiconductor industry. The physical mechanisms inhibiting sufficient energy deposition inside silicon with femtosecond laser pulses are reviewed in this article as well as the strategies established so far for bypassing these limitations. These solutions consisting of employing longer pulses (in the picosecond and nanosecond regime), femtosecond-pulse trains, and surface-seeded bulk modifications have allowed addressing numerous applications.

引用

页数：35

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