Interfacial reaction in joining of MoSi2 to graphite by interfacial reaction SPS method

被引:3
作者
Horibe, T
Uchiyama, H
Kurokawa, K
机构
[1] Facility of Engineering, Hokkaido University, Kita-ku, Sapporo, 060
来源
MATERIALS TRANSACTIONS JIM | 1996年 / 37卷 / 04期
关键词
MoSi2; graphite; interfacial reaction; diffusion path; joining; flexural strength;
D O I
10.2320/matertrans1989.37.743
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Interfacial reaction between MoSi2 and graphite in joining process using a spark plasma sintering equipment (SPS) was studied. Joining was carried out at 1673 K, 1873 K and 2073 K for 1.2 ks, 2.4 ks, 3.6 ks and 7.2 ks. The specimens joined by SPS were evaluated using the four-point bending strength methed. Reaction zone formed at the interface was characterized by SEM, EPMA and XRD. In addition, the suppression of interfacial reaction by interposing a titanium foil between graphite and MoSi2 was also done. As a result of the solid-state reaction between MoSi2 and graphite, SiC and Mo5Si3C are formed at the interface. The morphology of SiC changes from island to layer with joining time and temperature. The maximum flexual strength is gained in joining at 1873 K with joining time of 1.2 ks, although the flexual strength tends to decrease as SiC layer grows. When interposing a titanium foil, a titanium carbide layer is formed to suppress the formation of SiC.
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页码:743 / 747
页数:5
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