Synthesis of silicon carbide films by combined implantation with sputtering techniques

被引:20
作者
Li, Gaobao
Zhang, Jizhong [1 ]
Meng, Qingli
Li, Wenzhi
机构
[1] Tsing Hua Univ, Dept Mat Sci & Engn, Adv Mat Lab, Beijing 100084, Peoples R China
[2] Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
[3] Tsing Hua Univ, State Key Lab Tribol, Beijing 100084, Peoples R China
关键词
silicon carbide; MEVVA; IBAD; ion implantation;
D O I
10.1016/j.apsusc.2007.04.014
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Silicon carbide (SiC) films were synthesized by combined metal vapor vacuum are (MEVVA) ion implantation with ion beam assisted deposition (IBAD) techniques. Carbon ions with 40 keV energy were implanted into Si(1 0 0) substrates at ion fluence of 5 x 10(16) ions/cm(2). Then silicon and carbon atoms were co-sputtered on the Si(1 0 0) substrate surface, at the same time the samples underwent assistant Ar-ion irradiation at 20 keV energy. A group of samples with substrate temperatures ranging from 400 to 600 degrees C were used to analyze the effect of temperature on formation of the SiC film. Influence of the assistant Ar-ion irradiation was also investigated. The structure, morphology and mechanical properties of the deposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and nanoindentation, respectively. The bond configurations were obtained from IR absorption and Raman spectroscopy. The experimental results indicate that microcrystalline SiC films were synthesized at 600 degrees C. The substrate temperature and assistant Ar-ion irradiation played a key role in the process. The assistant Ar-ion irradiation also helps increasing the nanohardness and bulk modulus of the SiC films. The best values of nanohardness and bulk modulus were 24.1 and 282.6 GPa, respectively. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:8428 / 8434
页数:7
相关论文
共 31 条
[1]   MECHANISM OF PHOTOCURRENT MULTIPLICATION IN AMORPHOUS-SILICON CARBIDE SCHOTTKY CELLS [J].
AKITA, S ;
UEDA, H ;
NAKAYAMA, Y .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (03) :1120-1125
[2]   Ion beam analysis of SiCx thin films using a deuterium beam [J].
Andrade, E ;
Mahmood, A ;
Muhl, S ;
Zavala, EP ;
Pineda, JC ;
Huerta, L .
SURFACE & COATINGS TECHNOLOGY, 2002, 153 (2-3) :119-124
[3]  
[Anonymous], 1986, ASTM STAND E 92 ANN, P72
[4]   Formation of a surface SiC layer by carbon-ion implantation into silicon [J].
Brink, DJ ;
Camassel, J ;
Malherbe, JB .
THIN SOLID FILMS, 2004, 449 (1-2) :73-79
[5]   HIGH-CURRENT ION-SOURCE [J].
BROWN, IG ;
GAVIN, JE ;
MACGILL, RA .
APPLIED PHYSICS LETTERS, 1985, 47 (04) :358-360
[6]   Plasma assisted process for deposition of silicon carbide thin films [J].
Cho, NI ;
Choi, Y ;
Noh, SJ .
CURRENT APPLIED PHYSICS, 2006, 6 (02) :161-165
[7]   APPLICATIONS OF ION-BEAM-ASSISTED DEPOSITION [J].
COLLIGON, JS .
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1991, 139 :199-206
[8]   Strain relaxation at the 3C-SiC/Si interface: Raman scattering experiments [J].
Falkovsky, LA ;
Bluet, JM ;
Camassel, J .
PHYSICAL REVIEW B, 1998, 57 (18) :11283-11294
[9]   A NEW CONFOCAL STIGMATIC SPECTROMETER FOR MICRO-RAMAN AND MICROFLUORESCENCE SPECTRAL IMAGING ANALYSIS - DESIGN AND APPLICATIONS [J].
FEOFANOV, A ;
SHARONOV, S ;
VALISA, P ;
DASILVA, E ;
NABIEV, I ;
MANFAIT, M .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1995, 66 (05) :3146-3158
[10]   Growth and characterization of β-SiC films obtained by fs laser ablation [J].
Ghica, C ;
Ristoscu, C ;
Socol, G ;
Brodoceanu, D ;
Nistor, LC ;
Mihailescu, IN ;
Klini, A ;
Fotakis, C .
APPLIED SURFACE SCIENCE, 2006, 252 (13) :4672-4677