PREPARATION AND PERFORMANCE OF MODIFIED POLYVINYLIDENE FLUORIDE MEMBRANES GRAFTED WITH SULFONATED POLY(STYRENE-co-ACRYLIC ACID)

被引:1
|
作者
Guo Guibao [1 ,2 ]
Kou Shasha [3 ]
An Shengli [1 ,3 ]
机构
[1] Univ Sci & Technol Beijing, Sch Met & Ecol Engn, Beijing 100083, Peoples R China
[2] Inner Mongolia Univ Sci & Technol, Sch Chem Engn, Baotou 014010, Peoples R China
[3] Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Baotou 014010, Peoples R China
来源
ACTA POLYMERICA SINICA | 2010年 / 08期
关键词
Polyvinylidene fluoride; Styrene; Solution-grafting; Sulfonic acid membrane; POLY(VINYLIDENE FLUORIDE); TRANSPORT;
D O I
10.3724/SP.J.1105.2010.09296
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Polyvinylidene fluoride membranes grafted with sulfonated poly(styrene-co-acrylic acid) (PVDF-g-P(SSA-co-AA)) were prepared by a solution-grafting technique. In the technique, benzoylperoxide (BPO) was used as an evocating agent, and polystyrene and acrylic acid were grafted onto PVDF membranes modified with plain sodium silicate (Na4SiO4), then, the product was sulfonated to obtain PVDF-g-P(SSA-co-AA) membranes. The effects for the different ratio of styrene and acrylic acid on the grafting degree, and their humidity on the conductivity of membrane and the moisture content, were investigated. Fourier transform infrared spectroscopy (FTIR) was used to characterize the change of the membrane's microstructures before and after the grafting and the sulphonation. The morphologies of the PVDF and the PVDF-g-P(SSA-co-AA) membranes and the distribution of silicon were studied by scanning electrolytic microscope (SEM). The results indicated that the conductivity of PVDF-g-P(SSA-co-AA) membrane doped with 10 wt% Na4SiO4 was 0. 0198 S.cm(-1) at a relative humidity range of 20% similar to 80%, and the microstructures of PVDF membrane modified with plain sodium silicate (Na4SiO4) after the grafting and the sulphonation changed obviously, which indicated that the sulphonation had permeated into the membrane besides the membrane surface.
引用
收藏
页码:995 / 1002
页数:8
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