Fermi level tuning of Ag-doped Bi2Se3 topological insulator

被引：27

作者：

Uesugi, Eri ^{[1
]}

Uchiyama, Takaki ^{[1
]}

Goto, Hidenori ^{[1
]}

Ota, Hiromi ^{[2
]}

Ueno, Teppei ^{[1
]}

Fujiwara, Hirokazu ^{[1
]}

Terashima, Kensei ^{[1
]}

Yokoya, Takayoshi ^{[1
]}

Matsui, Fumihiko ^{[3
]}

Akimitsu, Jun ^{[1
]}

Kobayashi, Kaya ^{[1
]}

Kubozono, Yoshihiro ^{[1
]}

机构：

[1] Okayama Univ, Res Inst Interdisciplinary Sci, Okayama 7008530, Japan

[2] Okayama Univ, Adv Sci Res Ctr, Okayama 7008530, Japan

[3] Nara Inst Sci & Technol, Grad Sch Mat Sci, Ikoma 6300192, Japan

来源：

SCIENTIFIC REPORTS | 2019年 / 9卷 / 1期

关键词：

SUPERCONDUCTIVITY;

D O I：

10.1038/s41598-019-41906-7

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The temperature dependence of the resistivity (rho) of Ag-doped Bi2Se3 (AgxBi2-xSe3) shows insulating behavior above 35 K, but below 35 K, rho suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi2Se3 at 1.5-300 K. This significant change in transport properties from metallic behavior clearly shows that the Ag doping of Bi2Se3 can effectively tune the Fermi level downward. The Hall effect measurement shows that carrier is still electron in AgxBi2-xSe3 and the electron density changes with temperature to reasonably explain the transport properties. Furthermore, the positive gating of AgxBi2-xSe3 provides metallic behavior that is similar to that of non-doped Bi2Se3, indicating a successful upward tuning of the Fermi level.

引用

页数：8

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