Evolution of {311} type defects in boron-doped structures: Experimental evidence of boron-interstitial cluster formation

被引：14

作者：

Lilak, AD ^{[1
]}

Earles, SK ^{[1
]}

Law, ME ^{[1
]}

Jones, KS ^{[1
]}

机构：

[1] Univ Florida, Dept Elect Engn, SWAMP Ctr, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 14期

关键词：

D O I：

10.1063/1.123749

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Boron-doped well structures formed in Czochralski silicon are subjected to a self-implant and various anneals to form a population of type {311} defects. Quantitative transmission electron microscopy is then used to measure the residual interstitials trapped in the {311} defects as a function of boron concentration and anneal temperature. We have found a strong tendency for increased dissolution rates of {311} type defects at boron concentrations above 10(18) cm(-3), providing direct evidence for the formation of boron-interstitial clusters. By profiling the samples with secondary ion mass steptroscopy and comparing the results to spreading resistance measurements the degree of deactivation can be determined. (C) 1999 American Institute of Physics. [S0003-6951(99)04810-X].

引用

页码：2038 / 2040

页数：3

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