150-GHz RF SOI-CMOS Technology in Ultrathin Regime on Organic Substrate

被引：18

作者：

des Etangs-Levallois, Aurelien Lecavelier ^{[1
]}

Dubois, Emmanuel ^{[1
]}

Lesecq, Marie ^{[1
]}

Danneville, Francois ^{[1
]}

Poulain, Laurent ^{[1
]}

Tagro, Yoann ^{[1
]}

Lepilliet, Sylvie ^{[1
]}

Gloria, Daniel ^{[2
]}

Raynaud, Christine ^{[2
]}

Troadec, David ^{[1
]}

机构：

[1] CNRS, Inst Elect & Microelect & Nanotechnol, UMR 8520, F-59652 Villeneuve Dascq, France

[2] STMicroelectronics, F-38920 Crolles, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 11期

关键词：

CMOS; organic substrate; plastic; thin film; THIN-FILM-TRANSISTOR; FLEXIBLE SUBSTRATE;

D O I：

10.1109/LED.2011.2166241

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter provides an experimental demonstration of high-performance industrial MOSFETs thinned down to 5.7 mu m and transferred onto a 125-mu m-thick polyethylene naphthalate foil. The die stack transferred onto the organic substrate comprises the 200-nm-thick active layer and the 5.5-mu m-thick interconnection multilayer stack resulting in a light, compact, and bendable thin film. We unveil that dc and RF performances are invariant even for ultimate thinning down to the buried oxide layer. Furthermore, n-MOSFET performance is improved by 1.5x compared with previous work, and the first demonstration of 100-GHz p-MOSFETs on an organic substrate is presented. Unity-current-gain cutoff and maximum oscillation frequencies as high as 150/160 GHz for n-MOSFETs and 100/130 GHz for p-MOSFETs on a plastic substrate have been measured, respectively.

引用

页码：1510 / 1512

页数：3