150-GHz RF SOI-CMOS Technology in Ultrathin Regime on Organic Substrate

被引：18

作者：

des Etangs-Levallois, Aurelien Lecavelier ^{[1
]}

Dubois, Emmanuel ^{[1
]}

Lesecq, Marie ^{[1
]}

Danneville, Francois ^{[1
]}

Poulain, Laurent ^{[1
]}

Tagro, Yoann ^{[1
]}

Lepilliet, Sylvie ^{[1
]}

Gloria, Daniel ^{[2
]}

Raynaud, Christine ^{[2
]}

Troadec, David ^{[1
]}

机构：

[1] CNRS, Inst Elect & Microelect & Nanotechnol, UMR 8520, F-59652 Villeneuve Dascq, France

[2] STMicroelectronics, F-38920 Crolles, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 11期

关键词：

CMOS; organic substrate; plastic; thin film; THIN-FILM-TRANSISTOR; FLEXIBLE SUBSTRATE;

D O I：

10.1109/LED.2011.2166241

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter provides an experimental demonstration of high-performance industrial MOSFETs thinned down to 5.7 mu m and transferred onto a 125-mu m-thick polyethylene naphthalate foil. The die stack transferred onto the organic substrate comprises the 200-nm-thick active layer and the 5.5-mu m-thick interconnection multilayer stack resulting in a light, compact, and bendable thin film. We unveil that dc and RF performances are invariant even for ultimate thinning down to the buried oxide layer. Furthermore, n-MOSFET performance is improved by 1.5x compared with previous work, and the first demonstration of 100-GHz p-MOSFETs on an organic substrate is presented. Unity-current-gain cutoff and maximum oscillation frequencies as high as 150/160 GHz for n-MOSFETs and 100/130 GHz for p-MOSFETs on a plastic substrate have been measured, respectively.

引用

页码：1510 / 1512

页数：3

共 21 条

[1] High-speed mechanically flexible single-crystal silicon thin-film transistors on plastic substrates [J].

Ahn, Jong-Hyun ;

Kim, Hoon-Sik ;

Lee, Keon Jae ;

Zhu, Zhengtao ;

Menard, Etienne ;

Nuzzo, Ralph G. ;

Rogers, John A. .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (06) :460-462

[2] Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance [J].

Cheng, Chun-Hu ;

Yeh, Fon-Shan ;

Chin, Albert .

ADVANCED MATERIALS, 2011, 23 (07) :902-+

[3] Electroluminescence characterization of FOLED devices under two type of external stresses caused by bending [J].

Chiang, Chien-Jung ;

Winscom, Chris ;

Monkman, Andy .

ORGANIC ELECTRONICS, 2010, 11 (11) :1870-1875

[4] Gigahertz frequency flexible carbon nanotube transistors [J].

Chimot, N. ;

Derycke, V. ;

Goffman, M. F. ;

Bourgoin, J. P. ;

Happy, H. ;

Dambrine, G. .

APPLIED PHYSICS LETTERS, 2007, 91 (15)

[5]

Halonen E., 2009, Microelectronics and Packaging Conference, P1

[6] Printable high-speed thin-film transistor on flexible substrate using carbon nanotube solution [J].

Han, X. ;

Janzen, D. C. ;

Vaillancourt, J. ;

Lu, X. .

MICRO & NANO LETTERS, 2007, 2 (04) :96-98

[7] COMPARISON OF XEF2 AND F-ATOM REACTIONS WITH SI AND SIO2 [J].

IBBOTSON, DE ;

FLAMM, DL ;

MUCHA, JA ;

DONNELLY, VM .

APPLIED PHYSICS LETTERS, 1984, 44 (12) :1129-1131

[8] DC-RF performance improvement for strained 0.13 μm MOSFETs mounted on a flexible plastic substrate [J].

Kao, H. L. ;

Chin, Albert ;

Liao, C. C. ;

Tseng, Y. Y. ;

McAlister, S. P. ;

Chi, C. C. .

2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5, 2006, :2043-+

[9] Low noise RF MOSFETs on flexible plastic substrates [J].

Kao, HL ;

Chin, A ;

Hung, BF ;

Lee, CF ;

Lai, JM ;

McAlister, SP ;

Sarnudra, GS ;

Yoo, WJ ;

Chi, CC .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (07) :489-491

[10] Gravure printed flexible organic photovoltaic modules [J].

Kopola, Palvi ;

Aernouts, Tom ;

Sliz, Rafal ;

Guillerez, Stephane ;

Ylikunnari, Mari ;

Cheyns, David ;

Valimaki, Marja ;

Tuomikoski, Markus ;

Hast, Jukka ;

Jabbour, Ghassan ;

Myllyla, Risto ;

Maaninen, Arto .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (05) :1344-1347

← 1 2 3 →