Simultaneous effects of temperature and pressure on diamagnetic susceptibility of a shallow donor in a quantum antidot

被引:21
作者
Khordad, R. [1 ]
Fathizadeh, N. [1 ]
机构
[1] Univ Yasuj, Dept Phys, Coll Sci, Yasuj 75914353, Iran
关键词
Susceptibility; Quantum antidot; Temperature; Pressure; HYDROGENIC IMPURITY STATES; HYDROSTATIC-PRESSURE; BINDING-ENERGIES; MAGNETIC-FIELD; DOTS; WELL; RINGS; GAAS; TRANSITION; DENSITY;
D O I
10.1016/j.physb.2012.01.133
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The effect of temperature and pressure, simultaneously, on the diamagnetic susceptibility and binding energy of a hydrogenic donor impurity at the center of a GaAs/Ga1-xAlxAs quantum antidot is studied within the effective mass approximation. For this goal, we first analytically solve the Schrodinger equation to obtain wavefunctions and energy levels. Then, using the electronic states, we can calculate the diamagnetic susceptibility. The results obtained from the present work reveals that (i) the diamagnetic susceptibility increases with increasing pressure, (ii) the diamagnetic susceptibility decreases by increasing temperature, (iii) the value < r(2)> decreases with increasing pressure due to the quantum confinement, and (iv) an increase in the pressure enchances the binding energy for a constant temperature. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:1301 / 1305
页数:5
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