Interface enhanced superconductivity in FeSe/SrTiO3 and the hidden nature

被引:4
作者
Han, Sha [1 ,2 ]
Song, Can-Li [1 ,3 ]
Ma, Xu-Cun [1 ,3 ]
Xue, Qi-Kun [1 ,3 ,4 ,5 ]
机构
[1] Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
[2] Suzhou Inst Nanotech & Nanobion, CAS Key Lab Nophoton Mat & Devices, Suzhou 215123, Peoples R China
[3] Frontier Sci Ctr Quantum Informat, Beijing 100084, Peoples R China
[4] Beijing Acad Quantum Informat Sci, Beijing 100193, Peoples R China
[5] Southern Univ Sci & Technol, Shenzhen 518055, Peoples R China
关键词
interface superconductivity; FeSe/SrTiO3; Band bending; Rigid shift; Electron-phonon coupling; High-T-c superconductivity; HIGH-TEMPERATURE SUPERCONDUCTIVITY; FESE FILMS; MONOLAYER FESE; T-C; 2-DIMENSIONAL SUPERCONDUCTIVITY; MOTT INSULATOR; BAND-STRUCTURE; PHOTOEMISSION; LAYER; COEXISTENCE;
D O I
10.5802/crphys.87
中图分类号
P1 [天文学];
学科分类号
0704 ;
摘要
The superconductivity confined in a two-dimensional interface exhibits many exotic phenomena that have certain counterparts in layered cuprates and iron-based superconductors, and thus provides rare opportunities to reveal the mystery of high temperature superconductivity therein. By constructing and tailoring hybrid heterostructures such as FeSe/SrTiO3 (FeSe/STO), interface-enhanced superconductivity arouses, and the substrate has been demonstrated to provide the phonons and enhance the strong electron-phonon coupling (EPC) within monolayer FeSe. More research and reporting systems uncover that the band-bending induced charge transfer at the interface could become a unified microscopic picture to design the new interface superconductors. With re-examination of the experimental research in LaAlO3/STO (TAO/STO) and unconventional superconductors, the common characteristics such as band bending and rigid band shift are perceived in the FeSe/STO, LAO/STO and cuprate superconductors. This review may provide important information to inspect the mechanism of high-T-c superconductivity from a different view.
引用
收藏
页码:163 / 182
页数:20
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