Conducting Si-doped γ-Ga2O3 epitaxial films grown by pulsed-laser deposition

被引：47

作者：

Oshima, Takayoshi ^{[1
]}

Matsuyama, Keitaro ^{[1
]}

Yoshimatsu, Kohei ^{[1
]}

Ohtomo, Akira ^{[1
,2
]}

机构：

[1] Tokyo Inst Technol, Dept Appl Chem, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Mat Res Ctr Element Strategy MCES, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2015年 / 421卷

关键词：

Doping; Pulsed-laser deposition; gamma-Ga2O3; Semiconducting gallium compounds; BETA-GA2O3; SINGLE-CRYSTALS; THIN-FILMS;

D O I：

10.1016/j.jcrysgro.2015.04.011

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report structural, electrical, and optical properties of Si doped gamma-Ga2O3 films epitaxially grown on (100) MgAl2O4 substrate by pulsed-laser deposition. The gamma-Ga2O3:Si films of a metastable spinet phase had neither secondary phase nor rotation domain. A highly doped film exhibited n-type conductivity with a carrier concentration of 1.8 x 10(19) cm(-3) and a Hall mobility of 1.6 cm(2) V-1 s(-1) at 300 K. Donor activation energy was estimated to be less than 7 meV from nearly temperature-independent transport Properties down to 77 K. The successful impurity doping indicates that gamma-Ga2O3 can be used as an n-type wide-band-gap semiconductor. (C) 2015 Elsevier B.V. All rights reserved.

引用

收藏

页码：23 / 26

页数：4

相关论文

共 30 条

[1] Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method [J].

Aida, Hideo ;

Nishiguchi, Kengo ;

Takeda, Hidetoshi ;

Aota, Natsuko ;

Sunakawa, Kazuhiko ;

Yaguchi, Yoichi .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (11) :8506-8509

[2] Electrical Conductive Corundum-Structured α-Ga2O3 Thin Films on Sapphire with Tin-Doping Grown by Spray-Assisted Mist Chemical Vapor Deposition [J].

Akaiwa, Kazuaki ;

Fujita, Shizuo .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (07)

[3] Wide-bandgap semiconductor materials: For their full bloom [J].

Fujita, Shizuo .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (03)

[4] On the bulk β-Ga2O3 single crystals grown by the Czochralski method [J].

Galazka, Zbigniew ;

Irmscher, Klaus ;

Uecker, Reinhard ;

Bertram, Rainer ;

Pietsch, Mike ;

Kwasniewski, Albert ;

Naumann, Martin ;

Schulz, Tobias ;

Schewski, Robert ;

Klimm, Detlef ;

Bickermann, Matthias .

JOURNAL OF CRYSTAL GROWTH, 2014, 404 :184-191

[5] Epitaxial growth of Mn-doped γ-Ga2O3 on spinel substrate [J].

Hayashi, Hiroyuki ;

Huang, Rong ;

Oba, Fumiyasu ;

Hirayama, Tsukasa ;

Tanaka, Isao .

JOURNAL OF MATERIALS RESEARCH, 2011, 26 (04) :578-583

[6] Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics [J].

Higashiwaki, Masataka ;

Sasaki, Kohei ;

Kamimura, Takafumi ;

Wong, Man Hoi ;

Krishnamurthy, Daivasigamani ;

Kuramata, Akito ;

Masui, Takekazu ;

Yamakoshi, Shigenobu .

APPLIED PHYSICS LETTERS, 2013, 103 (12)

[7] Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates [J].

Higashiwaki, Masataka ;

Sasaki, Kohei ;

Kuramata, Akito ;

Masui, Takekazu ;

Yamakoshi, Shigenobu .

APPLIED PHYSICS LETTERS, 2012, 100 (01)

[8] Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method [J].

Irmscher, K. ;

Galazka, Z. ;

Pietsch, M. ;

Uecker, R. ;

Fornari, R. .

JOURNAL OF APPLIED PHYSICS, 2011, 110 (06)

[9] Successful Growth of Conductive Highly Crystalline Sn-Doped α-Ga2O3 Thin Films by Fine-Channel Mist Chemical Vapor Deposition [J].

Kawaharamura, Toshiyuki ;

Dang, Giang T. ;

Furuta, Mamoru .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (04)

[10] LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES [J].

MORKOC, H ;

STRITE, S ;

GAO, GB ;

LIN, ME ;

SVERDLOV, B ;

BURNS, M .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1363-1398