High-power 783 nm distributed-feedback laser

被引：29

作者：

Wenzel, H ^{[1
]}

Klehr, A ^{[1
]}

Braun, M ^{[1
]}

Bugge, F ^{[1
]}

Erbert, G ^{[1
]}

Fricke, J ^{[1
]}

Knauer, A ^{[1
]}

Weyers, M ^{[1
]}

Tränkle, G ^{[1
]}

机构：

[1] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 02期

关键词：

D O I：

10.1049/el:20040073

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A ridge-waveguide GaAsP/AlGaAs laser, emitting an optical power of up to 200 mW in a single lateral and longitudinal mode at a wavelength of 783 run, is presented. The distributed feedback is provided by a second-order grating, formed into an InGaP/GaAsP/InGaP multilayer structure. The laser is well suited as a light source for Raman spectroscopy.

引用

页码：123 / 124

页数：2

共 5 条

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[5]

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