Room-temperature lasing operation of a quantum-dot vertical-cavity surface-emitting laser

被引：183

作者：

Saito, H

Nishi, K

Ogura, I

Sugou, S

Sugimoto, Y

机构：

[1] Opto-Electronics Res. Laboratories, NEC Corporation, Tsukuba, Ibaraki 305

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 21期

关键词：

D O I：

10.1063/1.116808

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-assembled growth of quantum dots by molecular-beam epitaxy is used to form the active region of a vertical-cavity surface-emitting laser (VCSEL). Ten layers of InGaAs quantum dots are stacked in order to increase the gain. This quantum-dot VCSEL has a continuous-wave operating current of 32 mA at room temperature. Emission spectra at various current injections demonstrate that the lasing action is associated with a higher-order transition in the quantum dots. (C) 1996 American Institute of Physics.

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页码：3140 / 3142

页数：3

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