Anomalous photovoltaic effect in nanocrystalline Si/SiO2 composites

被引:15
作者
Aharoni, H. Levi [1 ]
Azulay, D.
Millo, O.
Balberg, I.
机构
[1] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel
基金
以色列科学基金会;
关键词
D O I
10.1063/1.2897294
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have observed an anomalous photovoltaic effect in films of Si nanocrystals embedded in SiO2. Using conductive-probe atomic force microscopy and global transport measurements, we found, close to the percolation threshold of the Si crystallite phase, a large photovoltaic effect of up to about 7 V. Following the dependence of this effect on the size of the Si nanocrystals and on the relative tip position with respect to the counterelectrode, we suggest a model based on charge separation of excited electron-hole pairs governed by the size-dependent quantum confinement and charging energies. (c) 2008 American Institute of Physics.
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页数:3
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