Dopant distribution in selectively regrown InP:Fe studied by time-resolved photoluminescence

被引：5

作者：

Gaarder, A ^{[1
]}

Marcinkevicius, S

Messmer, ER

Lourdudoss, S

机构：

[1] Royal Inst Technol, Dept Phys Opt, S-10044 Stockholm, Sweden

[2] Royal Inst Technol, Dept Elect, Lab Semicond Mat, Electrum 229, S-16440 Kista, Sweden

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 226卷 / 04期

关键词：

time-resolved photoluminescence; computer simulation; hydride vapor phase epitaxy selective regrowth; semi-insulating InP : Fe; laser diode;

D O I：

10.1016/S0022-0248(01)01279-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We apply time-resolved photoluminescence with 1 mum spatial resolution for the characterization of iron distribution in semi-insulating InP:Fe epitaxial layers regrown by hydride vapor-phase epitaxy around etched mesas. The InP:Fe regrowth was carried out on InP:S mesas etched both along the [110] and [110] crystallographic directions, as well as on InP/InGaAsP in-plane lasers. In all cases, the Fe concentration was found to be close to the target values and showed little variation along the regrown layers. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：451 / 457

页数：7

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