Stability of the Si-H bond on the hydrogen-terminated Si(111) surface studied by sum frequency generation

被引：35

作者：

Ye, S

Saito, T

Nihonyanagi, S

Uosaki, K ^{[1
]}

Miranda, PB

Kim, D

Shen, YR

机构：

[1] Hokkaido Univ, Grad Sch Sci, Div Chem, Phys Chem Lab, Sapporo, Hokkaido 0600810, Japan

[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

来源：

SURFACE SCIENCE | 2001年 / 476卷 / 1-2期

关键词：

sum frequency generation; desorption induced by photon stimulation; photochemistry; silicon; low index single crystal surfaces; hydrogen atom; solid-gas interfaces;

D O I：

10.1016/S0039-6028(01)00690-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Stability of the Si-H bonds on the hydrogen-terminated Si(111) surface has been investigated by sum frequency generation (SFG) spectroscopy in air at room temperature. The SFG observation showed that the Si(111) surface is terminated by a monolayer of monohydride (W-H) after etching in a concentrated ammonium fluoride (NH4F) solution. The number of Si-H bonds decreased with laser irradiation time and the abstraction rate of hydrogen atoms on Si increased with the increase of input energy of "visible" light. The Si-H bond under irradiation at 1064 nm light was more stable than that at 532 nm light with a given intensity. A small amount of water in air severely lowered the stability of Si-H bond because of a photoelectrochemical reaction under laser irradiation. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：121 / 128

页数：8

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