Irradiated bilayer graphene

被引:42
作者
Abergel, D. S. L. [1 ,2 ]
Chakraborty, Tapash [1 ]
机构
[1] Univ Manitoba, Dept Phys & Astron, Winnipeg, MB R3T 2N2, Canada
[2] Univ Maryland, Condensed Matter Theory Ctr, College Pk, MD 20742 USA
基金
加拿大自然科学与工程研究理事会;
关键词
FIELD;
D O I
10.1088/0957-4484/22/1/015203
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We describe the gated bilayer graphene system when it is subjected to intense terahertz frequency electromagnetic radiation. We examine the electron band structure and density of states via exact diagonalization methods within Floquet theory. We find that dynamical states are induced which lead to modification of the band structure. We first examine the situation where there is no external magnetic field. In the unbiased case, dynamical gaps appear in the spectrum which manifest as dips in the density of states. For finite inter-layer bias (where a static gap is present in the band structure of unirradiated bilayer graphene), dynamical states may be induced in the static gap. These states can show a high degree of valley polarization. When the system is placed in a strong magnetic field, the radiation induces coupling between the Landau levels which allows dynamical levels to exist. For strong fields, this means the Landau levels are smeared to form a near-continuum of states.
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页数:8
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