Effect of Shunts on Thin-Film CdTe Module Performance

被引:2
作者
Koishiyev, Galymzhan T. [1 ]
Sites, James R. [1 ]
机构
[1] Colorado State Univ, Dept Phys, Ft Collins, CO 80523 USA
来源
THIN-FILM COMPOUND SEMICONDUCTOR VOLTAICS-2009 | 2010年 / 1165卷
关键词
D O I
10.1557/PROC-1165-M05-22
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
A 2-D numerical circuit model is used to analyze the impact of shunts on basic performance parameters of a CdTe thin-film module. A numerical estimate of module-efficiency loss in the worst-case scenario due to shunts of different severity and fractional module area is presented. It is shown that absolute module-efficiency loss Delta eta (%) varies in systematic fashion with these shunt parameters. Estimates of Delta eta based on simple area-weighted efficiency are typically low by 3-4 times. Furthermore, the distribution pattern of shunts over the module plays a significant role in the module loss. A reliable parameter P to characterize the distribution of shunts is introduced, and its effect on module-efficiency loss, as well as individual-parameter (FF, V-OC and J(SC)) losses, is shown. Furthermore, higher transparent-conductive-oxide (TCO) sheet resistance is shown to increase shunt isolation and consequently mitigate the efficiency decrease.
引用
收藏
页码:203 / +
页数:2
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