Structural, optical and electrical properties in indium selenide thin films prepared under nitrogen atmosphere

被引：2

作者：

Sahayaraj, C. A. R. Maria ^{[1
]}

Mohan, A. ^{[1
,2
]}

Rathesh, K. ^{[2
]}

Rajesh, S. ^{[3
]}

机构：

[1] St Josephs Coll, Dept Phys, Bangalore 560027, Karnataka, India

[2] Karunya Univ, Dept Phys, Thin Film Lab, Coimbatore 641114, Tamil Nadu, India

[3] Karunya Univ, Dept Nanosci & Technol, Coimbatore 641114, Tamil Nadu, India

来源：

MATERIALS TODAY COMMUNICATIONS | 2017年 / 12卷

关键词：

Indium selenide; Conductivity; Rod; Nitrogen; THERMAL EVAPORATION TECHNIQUE; IN2SE3;

D O I：

10.1016/j.mtcomm.2017.06.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The present study investigates structural optical and electrical properties of Indium Selenide thin films under nitrogen atmosphere and substrate heat treatment. Thermal evaporation technique was used to prepare indium selenide films. The X-ray diffraction reveals enhancement in crystallinity due to the nitrogen atmosphere during deposition. The calculated average crystalline size is increased due to nitrogen with substrate heated sample. The SEM images show the small grain for substrate heat treated samples and rod like shape for nitrogen with substrate heated samples. The conductivity was improved for nitrogen with substrate heated samples. All the samples show n-type conductivity. The Raman shift was observed at 468.54 cm(-1) for all the samples and confirms the crystallinity improvement.

引用

页码：29 / 33

页数：5

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