Low-temperature growth of high-quality ZnO layers by surfactant-mediated molecular-beam epitaxy

被引：11

作者：

Park, S. H. ^{[1
]}

Suzuki, H. ^{[1
]}

Minegishi, T. ^{[1
]}

Fujimoto, G. ^{[2
]}

Park, J. S. ^{[1
]}

Im, I. H. ^{[1
]}

Oh, D. C. ^{[1
]}

Cho, M. W. ^{[1
]}

Yao, T. ^{[1
,2
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 309卷 / 02期

关键词：

surfaces; molecular beam epitaxy; oxides;

D O I：

10.1016/j.jcrysgro.2007.09.020

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High-quality ZnO layers are grown on Zn-polar ZnO substrates by surfactant-mediated plasma-assisted molecular-beam epitaxy (P-MBE) using atomic hydrogen as a surfactant. Careful investigation with atomic force microscopy (AFM) and reflection high-energy electron diffraction (RHEED) reveals that two-dimensional growth is preserved down to 400 degrees C by irradiating atomic hydrogen during growth, while the low-temperature limit of two-dimensional growth is 600 degrees C without atomic hydrogen irradiation. The crystal quality of ZnO layers grown at 400 degrees C by surfactant-mediated MBE is evaluated to be the same as those grown at 600 degrees C by conventional MBE in terms of X-ray diffraction and photo luminescence properties. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：158 / 163

页数：6

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