Recombination mechanisms in GaInNAs/GaAs multiple quantum wells

被引：108
|
作者：
Kaschner, A
Lüttgert, T
Born, H
Hoffmann, A
Egorov, AY
Riechert, H
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Infineon Technol, Corp Res, D-81730 Munich, Germany
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 10期
关键词：
D O I：
10.1063/1.1355014
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Recombination processes in Ga1-xInxNyAs1-y/GaAs multiple quantum wells (MQWs) were investigated as function of the nitrogen molar fraction. We found a pronounced S-shaped behavior for the temperature-dependent shift of the photoluminescence emission similar to the ternary nitrides InGaN and AlGaN. This is explained by exciton localization at potential fluctuations. Time-resolved measurements at 4 K reveal an increase of the decay time with decreasing emission energy. A model based on lateral transfer processes to lower-energy states is proposed to explain this energy dependence. The formation of tail states in the Ga1-xInxNyAs1-y/GaAs MQWs is attributed to nitrogen fluctuations. (C) 2001 American Institute of Physics.
引用
收藏
页码：1391 / 1393
页数：3
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