Towards high accuracy reflectometry for extreme-ultraviolet lithography

被引：17

作者：

Tarrio, C ^{[1
]}

Grantham, S ^{[1
]}

Squires, MB ^{[1
]}

Vest, RE ^{[1
]}

Lucatorto, TB ^{[1
]}

机构：

[1] Natl Inst Stand & Technol, Phys Lab, Electron & Opt Phys Div, Photon Phys Grp, Gaithersburg, MD 20899 USA

来源：

JOURNAL OF RESEARCH OF THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY | 2003年 / 108卷 / 04期

关键词：

extreme ultraviolet; lithography; metrology; reflectometry; synchrotron radiation; LIGHT-SOURCE;

D O I：

10.6028/jres.108.025

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Currently the most demanding application of extreme ultraviolet optics is connected with the development of extreme ultraviolet lithography. Not only does each of the Mo/Si multilayer extreme-ultraviolet stepper mirrors require the highest attainable reflectivity at 13 nm ( nearly 70 %), but the central wavelength of the reflectivity of these mirrors must be measured with a wavelength repeatability of 0.001 nm and the peak reflectivity of the reflective masks with a repeatability of 0.12 %. We report on two upgrades of our NIST/DARPA Reflectometry Facility that have given us the ability to achieve 0.1 % repeatability and 0.3 % absolute uncertainty in our reflectivity measurements. A third upgrade, a monochromator with thermal and mechanical stability for improved wavelength repeatability, is currently in the design phase.

引用

页码：267 / 273

页数：7

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