VO2 multidomain heteroepitaxial growth and terahertz transmission modulation

被引：77

作者：

Chen, Changhong ^{[1
,2
,3
]}

Zhu, Yanhan ^{[1
,2
]}

Zhao, Yong ^{[1
,2
]}

Lee, Joon Hwan ^{[4
]}

Wang, Haiyan ^{[4
]}

Bernussi, Ayrton ^{[1
,2
]}

Holtz, Mark ^{[2
,5
]}

Fan, Zhaoyang ^{[1
,2
]}

机构：

[1] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA

[2] Texas Tech Univ, Nano Tech Ctr, Lubbock, TX 79409 USA

[3] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China

[4] Texas A&M Univ, Dept Elect Engn, College Stn, TX 77843 USA

[5] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 21期

关键词：

METAMATERIAL; PHASE;

D O I：

10.1063/1.3519361

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the epitaxial relationship of VO2 thin-films on c-plane sapphire and their terahertz transmission modulation with temperature. The films exhibit a triple-domain structure caused by the lattice mismatch between monoclinic VO2 and sapphire hexagon. The epitaxial relationship is determined to be VO2[010]parallel to Al2O3[0001] and VO2((2) over bar 02)parallel to Al2O3{11 (2) over bar0}, with the in-plane lattice mismatch of 2.66% (tensile) along [(2) over bar 02] and the out-of-plane lattice mismatch of -2.19% (compressive). Terahertz measurements revealed that VO2 films have over fourfold change in transmission during the metal-insulator transition, indicating a strong potential for terahertz wave switching and modulation applications. (C) 2010 American Institute of Physics. [doi:10.1063/1.3519361]

引用

页数：3

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