VO2 multidomain heteroepitaxial growth and terahertz transmission modulation

被引：77
作者：
Chen, Changhong [1 ,2 ,3 ]
Zhu, Yanhan [1 ,2 ]
Zhao, Yong [1 ,2 ]
Lee, Joon Hwan [4 ]
Wang, Haiyan [4 ]
Bernussi, Ayrton [1 ,2 ]
Holtz, Mark [2 ,5 ]
Fan, Zhaoyang [1 ,2 ]
机构：
[1] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA
[2] Texas Tech Univ, Nano Tech Ctr, Lubbock, TX 79409 USA
[3] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China
[4] Texas A&M Univ, Dept Elect Engn, College Stn, TX 77843 USA
[5] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 21期
关键词：
METAMATERIAL; PHASE;
D O I：
10.1063/1.3519361
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the epitaxial relationship of VO2 thin-films on c-plane sapphire and their terahertz transmission modulation with temperature. The films exhibit a triple-domain structure caused by the lattice mismatch between monoclinic VO2 and sapphire hexagon. The epitaxial relationship is determined to be VO2[010]parallel to Al2O3[0001] and VO2((2) over bar 02)parallel to Al2O3{11 (2) over bar0}, with the in-plane lattice mismatch of 2.66% (tensile) along [(2) over bar 02] and the out-of-plane lattice mismatch of -2.19% (compressive). Terahertz measurements revealed that VO2 films have over fourfold change in transmission during the metal-insulator transition, indicating a strong potential for terahertz wave switching and modulation applications. (C) 2010 American Institute of Physics. [doi:10.1063/1.3519361]
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页数：3
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