Light-emitting diodes fabricated from small-size ZnO quantum dots

被引：53

作者：

Qiao, Q. ^{[1
,2
]}

Li, B. H. ^{[1
]}

Shan, C. X. ^{[1
]}

Liu, J. S. ^{[1
,2
]}

Yu, J. ^{[1
,2
]}

Xie, X. H. ^{[1
,2
]}

Zhang, Z. Z. ^{[1
]}

Ji, T. B. ^{[1
]}

Jia, Y. ^{[3
]}

Shen, D. Z. ^{[1
]}

机构：

[1] Chinese Acad Sci, State Key Lab Luminescence & Applicat, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

[3] NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China

来源：

MATERIALS LETTERS | 2012年 / 74卷

关键词：

Zinc oxide; Semiconductors; Quantum dot; Light-emitting diode; Luminescence; SEMICONDUCTOR CLUSTERS;

D O I：

10.1016/j.matlet.2012.01.048

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Zinc oxide (ZnO) quantum dots (QDs) have been fabricated. High-resolution transmission electron microscopy shows that the ZnO QDs have a narrow size distribution, and are highly crystallized with wurtzite structure. Light-emitting diodes have been constructed by employing the QDs as active layers. Intense near-band-edge emissions have been observed from the diodes, which show a noticeable blue-shift compared with the emission of a similar diode employing ZnO film as an active layer, which is demonstrated to come from the quantum size effect of the QDs due to their small size. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：104 / 106

页数：3

共 17 条

[1] ELECTRONIC WAVE-FUNCTIONS IN SEMICONDUCTOR CLUSTERS - EXPERIMENT AND THEORY [J].