Misorientation-angle dependence of boron incorporation into (001)-oriented chemical-vapor-deposited (CVD) diamond

被引：31

作者：

Ogura, Masahiko ^{[1
]}

Kato, Hiromitsu ^{[1
]}

Makino, Toshiharu ^{[1
]}

Okushi, Hideyo ^{[1
]}

Yamasaki, Satoshi ^{[1
,2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Energy Technol Res Inst, Tsukuba, Ibaraki 3058568, Japan

[2] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 317卷 / 01期

关键词：

p-type; Doping; CVD; Step-flow growth; Diamond; Semiconductor; STEP-FLOW MODE; FILMS; GROWTH; TRIMETHYLBORON; QUALITY; DEFECTS; SURFACE;

D O I：

10.1016/j.jcrysgro.2011.01.010

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigated the boron (B) incorporation ratio ((B/C)(film)) in chemical vapor deposition (CVD) homoepitaxial diamond films as a parameter of the misorientation-angle (theta(off)) of substrates under the partial step-flow condition of (CH4/H-2)(gas)=0.3%. The boron concentration in a diamond network, N-B, strongly depends on theta(off). This suggests that there are two processes for incorporation of boron atoms in a diamond network: one is caused by step-flow growth and the other is caused by island growth on a terrace of a growing diamond surface. Using a simplified model focusing on the step-flow growth in which a boron atom embedded in the top layer is desorbed from the surface with a certain probability, we analyzed the mechanism by which boron is incorporated into diamond CVD films. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：60 / 63

页数：4

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