Manipulating the Solubility of SnSe in SnTe by Br Doping for Improving the Thermoelectric Performance

被引：7

作者：

Zhang, Zhongwei ^{[1
]}

Xu, Wenjing ^{[1
]}

Liu, Chengyan ^{[1
]}

Li, Fucong ^{[1
]}

Yang, Hengquan ^{[2
,3
]}

Wang, Xiaoyang ^{[1
]}

Gao, Jie ^{[1
]}

Chen, Chen ^{[4
]}

Zhang, Qian ^{[4
]}

Liu, Jing ^{[1
]}

Bai, Xiaobo ^{[1
]}

Peng, Ying ^{[1
]}

Miao, Lei ^{[1
,5
]}

机构：

[1] Guilin Univ Elect Technol, Engn Res Ctr Elect Informat Mat & Devices, Guangxi Key Lab Informat Mat, Minist Educ, Guilin 541004, Peoples R China

[2] Huaiyin Normal Univ, Sch Phys & Elect & Elect Engn, Huaian 223300, Peoples R China

[3] Huaiyin Normal Univ, Jiangsu Key Lab Modern Measurement Technol & Inte, Huaian 223300, Peoples R China

[4] Harbin Inst Technol, Sch Mat Sci & Engn, Shenzhen 518055, Peoples R China

[5] Shibaura Inst Technol, Dept Mat Sci & Engn, SIT Res Labs, Innovat Global Program,Fac Engn, Tokyo 1358548, Japan

来源：

ACS APPLIED ENERGY MATERIALS | 2021年 / 4卷 / 11期

基金：

中国国家自然科学基金;

关键词：

SnTe; SnSe nanoprecipitate; thermal conductivity; Br doping; thermoelectric performance; LATTICE THERMAL-CONDUCTIVITY; P-TYPE SNTE; BAND CONVERGENCE; CODOPED SNTE; MN; ENHANCEMENT; MG; OPTIMIZATION; TEMPERATURE; EFFICIENCY;

D O I：

10.1021/acsaem.1c02442

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

As a potential thermoelectric (TE) candidate with a rock salt structure similar to PbTe, SnTe has attracted much attention in recent years. However, a high carrier concentration caused by its inherent Sn vacancy severely lowers the TE performance. In this study, it is found that the introduction of Br on the basis of Se doping not only manipulates the carrier concentration but also reduces the solubility of SnSe in SnTe to form SnSe nanoprecipitates with suitable sizes (<10 nm) to scatter phonons. Thereby, the power factor is improved (similar to 1943 mu W m(-1) K-2) and the thermal conductivity is reduced (similar to 2.13 W m(-1) K-1), pushing the zT value up to similar to 0.75 (Sn1.03Se0.12Te0.870Br0.010) at 823 K. This study combines the carrier and chemical solubility engineering by halogen doping and provides an approach to improve the TE performance of materials with similar structures.

引用

页码：13027 / 13035

页数：9

共 58 条

[1] LATTICE THERMAL CONDUCTIVITY OF DISORDERED SEMICONDUCTOR ALLOYS AT HIGH TEMPERATURES [J].