BiCMOS High-Performance ICs: From DC to mm-Wave

被引：3
|
作者：
Smolders, A. B. [1 ]
Gul, H. [1 ]
v.d. Heijden, E. [1 ]
Gamand, P. [1 ]
Geurts, M. [1 ]
机构：
[1] NXP Semicond, NL-6534 AE Nijmegen, Netherlands
来源：
PROCEEDINGS OF THE 2009 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2009年
关键词：
Silicon bipolar/BiCMOS process technology; RF circuits; microwave circuits; mm-wave circuits; SILICON-GERMANIUM ICS; TECHNOLOGY; PASSIVES; RADAR; GHZ;
D O I：
10.1109/BIPOL.2009.5314130
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Progress with silicon and silicon germanium (SiGe) based BiCMOS technologies over the past few years has been very impressive. This enables the implementation of traditional microwave and emerging mm-wave applications in silicon. The paper gives an overview of several high-performance ICs that have been implemented in a state-of-the-art BiCMOS technology (QUBiC4). Examples of high-performance ICs are described ranging from basic building blocks for mobile applications to highly integrated receiver and transmitter ICs for applications up to the mm-wave range.
引用
收藏
页码：115 / 122
页数：8
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