Novel selective sidewall airgap process

被引：7

作者：

de Mussy, JPG ^{[1
]}

Bruynsereade, C ^{[1
]}

Tökei, Z ^{[1
]}

Beyer, GP ^{[1
]}

Maex, K ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

PROCEEDINGS OF THE IEEE 2005 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2005年

关键词：

D O I：

10.1109/IITC.2005.1499959

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the present work we demonstrate a novel selective process for airgap formation at the interconnects' sidewalls for single damascene interconnects. The proposed single step scheme is simpler than the currently existing airgap approaches. This process has been shown to be scalable down to spacings of 60 nm and allows capacitance drops in the range of 6 % - 39 % with only a marginal increase in leakage current.

引用

页码：150 / 152

页数：3

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